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Modélisation numérique des transistors à effet de champ organiques basé sur la densité d’états Gaussienne

Abstract : Although the device physics of organic field-effect transistors (OFETs) has been widely studied, the analysis with energetic distribution of the density-of-states (DOS) is still lacking in spite of the disordered nature of organic semiconductors. Because charge transport and injection take place at the Gaussian DOS, this distinctive energetic structure of organic semiconductors could make the charge-accumulation process, and hence the device operation, different. This thesis is dedicated to understanding the effect of Gaussian DOS on device parameters of OFETs, the threshold voltage, charge-carrier mobility and injection barrier via numerical finite-element based 2D simulations and experimental validation. The threshold voltage is comprehended by the charge trapping into the secondary Gaussian trap DOS as well as the intrinsic Gaussian DOS. We show that the overlap of two Gaussian DOSs due to the disorder induces specific threshold behaviors of OFETs. Second, the hopping transport is studied via Gaussian disordered model (GDM) on random spatial sites of organic semiconductors. This model can offer a precise result over GDM with cubic lattice. Also, we propose a correct parametrization of the model for wide range of materials from polymers to small molecules. Lastly, charge-based and transport-based injection barrier are studied and compared with Gaussian DOS. The advantages and limits of each model are evaluated.
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https://tel.archives-ouvertes.fr/tel-03047006
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Submitted on : Tuesday, December 8, 2020 - 4:32:14 PM
Last modification on : Wednesday, December 9, 2020 - 3:39:27 AM

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  • HAL Id : tel-03047006, version 1

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Yongjeong Lee. Modélisation numérique des transistors à effet de champ organiques basé sur la densité d’états Gaussienne. Physics [physics]. Institut Polytechnique de Paris, 2020. English. ⟨NNT : 2020IPPAX043⟩. ⟨tel-03047006⟩

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