A monolithic optical phase-shift detector on silicon

Abstract : A novel monolithically integrated device used as an optical phase-shift detector is presented. It consists of a diffraction grating etched at the surface of a p-n photodiode fabricated by a process compatible with a standard silicon CMOS technology. When two coherent light beams are collimated toward the surface of the device, the detected optical power generates a current depending on the relative phase between the two incident beams. The operating principle of this detector and the results obtained by finite-difference time-domain modeling are presented. The fabrication process of the first devices is described and the experimental validation of the concept is demonstrated
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https://hal-ujm.archives-ouvertes.fr/ujm-00122906
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Submitted on : Friday, January 5, 2007 - 3:31:39 PM
Last modification on : Tuesday, November 19, 2019 - 2:45:50 AM

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Philippe Arguel, Jérôme Valentin, S. Fourment, Françoise Lozes-Dupuy, Gérard Sarrabayrouse, et al.. A monolithic optical phase-shift detector on silicon. IEEE Sensors Journal, Institute of Electrical and Electronics Engineers, 2005, 5, pp.1305-1309. ⟨10.1109/JSEN.2005.858945⟩. ⟨ujm-00122906⟩

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