Ultraviolet optical properties of silica controlled by hydrogen trapping at Ge-related defects - Université Jean-Monnet-Saint-Étienne Access content directly
Journal Articles Physical Review B: Condensed Matter and Materials Physics (1998-2015) Year : 2007

Ultraviolet optical properties of silica controlled by hydrogen trapping at Ge-related defects

Abstract

We studied the effects induced by the ultraviolet-laser and -lamp exposure sequences on the twofold coordinated germanium (=Ge··) and the H(II) center (=Ge·-H) in silica. The H(II) centers, generated after the first laser irradiation stage by the trapping of atomic hydrogen H0 at the (=Ge··), are destroyed by the subsequent lamp exposure with efficiency depending on photon energy. The H(II) photodestruction is activated from ~4 eV, and its cross section is here quantitatively measured, so giving the absorption profile of this center. Consistent with the observed correlated recovering of (=Ge··), the photodestruction is mainly due to the photolysis of the G-H bond leading to hydrogen detrapping.
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Dates and versions

ujm-00172012 , version 1 (13-09-2007)

Identifiers

  • HAL Id : ujm-00172012 , version 1

Cite

Marco Cannas, G. Origlio. Ultraviolet optical properties of silica controlled by hydrogen trapping at Ge-related defects. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2007, pp.DOI: 10.1103/PhysRevB.75.233201. ⟨ujm-00172012⟩
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