Ultraviolet optical properties of silica controlled by hydrogen trapping at Ge-related defects

Abstract : We studied the effects induced by the ultraviolet-laser and -lamp exposure sequences on the twofold coordinated germanium (=Ge··) and the H(II) center (=Ge·-H) in silica. The H(II) centers, generated after the first laser irradiation stage by the trapping of atomic hydrogen H0 at the (=Ge··), are destroyed by the subsequent lamp exposure with efficiency depending on photon energy. The H(II) photodestruction is activated from ~4 eV, and its cross section is here quantitatively measured, so giving the absorption profile of this center. Consistent with the observed correlated recovering of (=Ge··), the photodestruction is mainly due to the photolysis of the G-H bond leading to hydrogen detrapping.
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Journal articles
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Submitted on : Thursday, September 13, 2007 - 5:15:40 PM
Last modification on : Wednesday, July 25, 2018 - 2:05:31 PM

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  • HAL Id : ujm-00172012, version 1

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Marco Cannas, G. Origlio. Ultraviolet optical properties of silica controlled by hydrogen trapping at Ge-related defects. Physical Review B : Condensed matter and materials physics, American Physical Society, 2007, pp.DOI: 10.1103/PhysRevB.75.233201. ⟨ujm-00172012⟩

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