FIRST PRINCIPLES STUDY OF OPTICAL PROPERTIES OF OXYGEN DEFICIENT CENTERS IN PURE AND GE-DOPED AMORPHOUS SILICA

N. Richard 1 L. Martin-Samos 2 Sébastien Girard 3 Y. Ouerdane 4 A. Boukenter 4 J.-P. Meunier 4
1 DCRE CEA-DIF - Département de Conception et réalisation des Experimentations CEA-DIF
2 Dipartimento di Fisica
3 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
4 LHC - Laboratoire Hubert Curien [Saint Etienne]
Abstract : Generation mechanisms of radiation-induced point defects in amorphous silica (a-SiO2) have been widely studied due to its central role in most of the contemporary electronics and photonics technologies used in harsh environments. Point defects or color centers are generated at the microscopic scale through ionizing or/and “knock-on” processes. At the macroscopic scale, these defects are responsible for the degradation of electrical properties of microelectronic components and of optical properties of bulk or fiber waveguides. In this study, we focus on Oxygen Deficient Centers (ODC) and theirs effects in optical fibers. Several experimental techniques allow the determination of the nature and properties of point defects. Electron Spin Resonance (ESR) is used to determine the structural properties and concentrations of paramagnetic centers. Optical Absorption (OA) measurements point out the bands responsible for the radiation-induced attenuation increase of optical fibers. Luminescence measurements can also be used to identify the emitting point defects.
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Conference papers
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https://hal-ujm.archives-ouvertes.fr/ujm-00297888
Contributor : Youcef Ouerdane <>
Submitted on : Wednesday, July 16, 2008 - 12:40:06 PM
Last modification on : Thursday, November 21, 2019 - 2:35:26 AM

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  • HAL Id : ujm-00297888, version 1

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UNIV-ST-ETIENNE | CNRS | CEA | LAHC | IOGS | PARISTECH | UDL

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N. Richard, L. Martin-Samos, Sébastien Girard, Y. Ouerdane, A. Boukenter, et al.. FIRST PRINCIPLES STUDY OF OPTICAL PROPERTIES OF OXYGEN DEFICIENT CENTERS IN PURE AND GE-DOPED AMORPHOUS SILICA. SiO2-2008 7th symposium on Advanced Dielectrics and Related Devices, Jun 2008, Saint-etienne, France. pp.53. ⟨ujm-00297888⟩

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