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Conference Papers Year : 2008

DUV phase mask for 100 nm period grating printing

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Y. Jourlin
  • Function : Author
  • PersonId : 852214
S. Reynaud
P. Karvinen
  • Function : Author
N. Passilly
A. Md. Zain
  • Function : Author
R. M. de La Rue
  • Function : Author

Abstract

Whereas microelectronic lithography is heading to the 32 nm node and discussing immersion and double-patterning strategies, there is much which can be done with the 45 nm node in microoptics for white light processing. For instance, one of the most demanding applications in terms of achievable period is the LCD lossless polarizer, which can transmit the TM polarization and reflect the TE polarization evenly all through the visible spectrum – provided that a 1D metal grid of 100 nm period can be fabricated. The manufacture of such polarizing panels cannot resort to the step & repeat cameras of microelectronics since the substrates are too large, too thin, too wavy and full of contaminants. There is therefore a need for specific fabrication techniques. It is one of these techniques that a subgroup of partners belonging to two of the Networks of Excellence of the European Community, NEMO and ePIXnet, have decided to explore together.
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Dates and versions

ujm-00303302 , version 1 (21-07-2008)

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Cite

Y. Jourlin, Y. Bourgin, S. Reynaud, O. Parriaux, A. Talneau, et al.. DUV phase mask for 100 nm period grating printing. Photonics Europe, From Micro- to Nano-optics, Apr 2008, France. pp.C1-C9, ⟨10.1117/12.783390⟩. ⟨ujm-00303302⟩
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