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Core Versus Cladding Effects of Proton Irradiation on Erbium-Doped Optical Fiber: Micro-Luminescence Study

B. Tortech 1 Sébastien Girard 2 E. Régnier 3 Y. Ouerdane 1 A. Boukenter 1 J.-P. Meunier 1 M. van Uffelen 4 A. Gusarov 4 F. Berghmans 5 H. Thienpont 5
1 LHC - Laboratoire Hubert Curien [Saint Etienne]
2 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
3 Draka Comteq France - Draka Comteq
4 SCK-CEN - Centre d'Etude de l'Energie Nucléaire
5 VUB - Vrije Universiteit Brussel
Abstract : We compare the visible and infrared luminescence spectra obtained by a green (514.5 nm) and infrared (830 nm) excitation of an erbium-doped fiber before and after irradiation with 105 MeV protons to an equivalent dose of 0.6 kGy(Si). For the irradiated fiber, we measured an increase of the luminescence intensity in this wavelength range due to the generation of additional color centers. Radiation defects such as Ge-NBOHC, Si-NBOHC are generated in both the fiber core and the cladding by the 105 MeV protons. They contribute through their luminescence bands at 1.84 eV (FWHM = 0 2 eV) and 2 eV (0.2 eV) to the fiber emission spectra. Two other pre-existing luminescence bands at 1.75 eV (0.32 eV) and 2.1 eV (0.37 eV), associated to host-matrix-point-defects, are enhanced by proton-irradiation. The Er3+ ions luminescence in both visible and infrared spectral ranges is also affected by the irradiation.
Keywords : Erbium-doped optical fiber luminescence proton- irradiation-induced effects
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-00326325
Contributor : Youcef Ouerdane <>
Submitted on : Thursday, October 2, 2008 - 3:43:35 PM
Last modification on : Thursday, June 4, 2020 - 11:46:02 AM

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UNIV-ST-ETIENNE | CNRS | CEA | LAHC | IOGS | PARISTECH | UDL

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B. Tortech, Sébastien Girard, E. Régnier, Y. Ouerdane, A. Boukenter, et al.. Core Versus Cladding Effects of Proton Irradiation on Erbium-Doped Optical Fiber: Micro-Luminescence Study. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (4), pp.2223, 2228. ⟨10.1109/TNS.2008.2000786⟩. ⟨ujm-00326325⟩

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