Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films - Archive ouverte HAL Access content directly
Journal Articles Thin Solid Films Year : 2001

Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films

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Christian Gautier
  • Function : Author
G. Moulard
  • Function : Author
Jean-Pierre Chatelon
Dispositifs et Instrumentation en Optoélectronique et micro-ondes
G. Motyl
  • Function : Author

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Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

Jean-Pierre Chatelon  : Connect in order to contact the contributor

https://hal-ujm.archives-ouvertes.fr/ujm-00356485

Submitted on : Tuesday, January 27, 2009-3:45:56 PM

Last modification on : Monday, December 12, 2022-5:26:11 PM

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ujm-00356485 , version 1 (27-01-2009)

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  • HAL Id : ujm-00356485 , version 1

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Christian Gautier, G. Moulard, Jean-Pierre Chatelon, G. Motyl. Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films. Thin Solid Films, 2001, 384, pp.102-108. ⟨ujm-00356485⟩

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