Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films

Christian Gautier; G. Moulard; Jean-Pierre Chatelon; G. Motyl

Journal Articles Thin Solid Films Year : 2001

Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films

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Christian Gautier

Function : Author

G. Moulard

Function : Author

Jean-Pierre Chatelon

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Dispositifs et Instrumentation en Optoélectronique et micro-ondes

G. Motyl

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Micro and nanotechnologies/Microelectronics

Jean-Pierre Chatelon : Connect in order to contact the contributor

https://hal-ujm.archives-ouvertes.fr/ujm-00356485

Submitted on : Tuesday, January 27, 2009-3:45:56 PM

Last modification on : Saturday, March 18, 2023-3:51:48 AM

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ujm-00356485 , version 1 (27-01-2009)

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HAL Id : ujm-00356485 , version 1

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Christian Gautier, G. Moulard, Jean-Pierre Chatelon, G. Motyl. Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films. Thin Solid Films, 2001, 384, pp.102-108. ⟨ujm-00356485⟩

Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films

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