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Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films

Christian Gautier G. Moulard Jean-Pierre Chatelon 1 G. Motyl 
1 DIOM - Dispositifs et Instrumentation en Optoélectronique et micro-ondes
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https://hal-ujm.archives-ouvertes.fr/ujm-00356485
Contributor : Jean-Pierre Chatelon Connect in order to contact the contributor
Submitted on : Tuesday, January 27, 2009 - 3:45:56 PM
Last modification on : Tuesday, November 19, 2019 - 2:37:05 AM

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  • HAL Id : ujm-00356485, version 1

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UNIV-ST-ETIENNE | UDL

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Christian Gautier, G. Moulard, Jean-Pierre Chatelon, G. Motyl. Influence of substrate bias voltage on the in situ stress measured by an improved optical cantilever technique of sputtered chromium films. Thin Solid Films, Elsevier, 2001, 384, pp.102-108. ⟨ujm-00356485⟩

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