Adaptive control of ion beams produced by ultrafast laser ablation of silicon

Abstract : In a context where ultrafast lasers have become ideal tools for material probing and processing we present various concepts for process control and optimization. Temporal tailoring of ultrashort laser pulses enables synergies between radiation and material and, therefore, new opportunities for optimal processing of materials. The concept of optimizing laser interactions is based on the possibility to adjust energy delivery so that control of laser-induced processes can be achieved and particular states of matter can be accessed. We present recent results related to the implementation of adaptive feedback loops based on temporal shaping of ultrafast laser pulses to control laser-induced phenomena for practical applications. The chosen example indicates the possibility to manipulate the kinetic properties of ions emitted from ultrafast laser irradiated semiconducting samples, using excitation sequences synchronized with the phasetransformation characteristic times. Versatile sub-keV ion beams are obtained exploiting transitions to supercritical fluid states with minimal energetic expenses, while achieving very efficient energy coupling and thermodynamic paths towards highly volatile states. Temporally selective irradiation can thus open up efficient thermodynamic paths towards critical points, delivering at the same time an extended degree of control in material processing.
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Conference papers
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https://hal-ujm.archives-ouvertes.fr/ujm-00357199
Contributor : Razvan Stoian <>
Submitted on : Thursday, January 29, 2009 - 5:25:47 PM
Last modification on : Wednesday, July 25, 2018 - 2:05:31 PM

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  • HAL Id : ujm-00357199, version 1

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Razvan Stoian, Alexandre Mermillod-Blondin, Nadezhda M. Bulgakova, Arkadi Rosenfeld, Maria Spyridaki, et al.. Adaptive control of ion beams produced by ultrafast laser ablation of silicon. SPIE Proceedings 5725, 329 Photonics West 2005 Ultrafast Phenomena in Semiconductors and Nanostructure Materials IX, Jan 2005, San Jose, United States. ⟨ujm-00357199⟩

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