Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes

O. Uteza; Benoît Bussiere; F. Canova; J.-P. Chambaret; Philippe Delaporte; Tatiana Itina; Marc Sentis

doi:10.1016/j.apsusc.2007.09.046

Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes

O. Uteza ¹ Benoît Bussiere ¹ F. Canova J.-P. Chambaret ² Philippe Delaporte ¹ Tatiana Itina ¹ Marc Sentis ¹

1 LP3 - Laboratoire Lasers, Plasmas et Procédés photoniques

Abstract : The surface laser-induced damage threshold fluence of sapphire is determined under various experimental conditions concerning the material irradiation (femtosecond, picosecond and nanosecond temporal regimes) and preparation (surface state). The results are of interest for optimising laser micromachining processes and for robust operation of high-peak power femtosecond Ti:sapphire laser chains.

keyword : Laser-induced damage Sapphire Femtosecond Picosecond Nanosecond

Type de document :

Article dans une revue

Applied Surface Science, Elsevier, 2007, 254 (4), pp.799-803. 〈10.1016/j.apsusc.2007.09.046〉

Domaine :

Sciences de l'ingénieur [physics] / Génie des procédés

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https://hal-ujm.archives-ouvertes.fr/ujm-00376961
Contributeur : Tatiana Itina <>
Soumis le : lundi 20 avril 2009 - 15:55:36
Dernière modification le : jeudi 10 mai 2018 - 02:00:46

Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes

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Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes

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