Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes

Abstract : The surface laser-induced damage threshold fluence of sapphire is determined under various experimental conditions concerning the material irradiation (femtosecond, picosecond and nanosecond temporal regimes) and preparation (surface state). The results are of interest for optimising laser micromachining processes and for robust operation of high-peak power femtosecond Ti:sapphire laser chains.
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Article dans une revue
Applied Surface Science, Elsevier, 2007, 254 (4), pp.799-803. 〈10.1016/j.apsusc.2007.09.046〉
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https://hal-ujm.archives-ouvertes.fr/ujm-00376961
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Soumis le : lundi 20 avril 2009 - 15:55:36
Dernière modification le : jeudi 10 mai 2018 - 02:00:46

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O. Uteza, Benoît Bussiere, F. Canova, J.-P. Chambaret, Philippe Delaporte, et al.. Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes. Applied Surface Science, Elsevier, 2007, 254 (4), pp.799-803. 〈10.1016/j.apsusc.2007.09.046〉. 〈ujm-00376961〉

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