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Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes

O. Uteza 1 Benoît Bussiere 1 F. Canova J.-P. Chambaret 2 Philippe Delaporte 1 Tatiana Itina 1 Marc Sentis 1
1 LP3 - Laboratoire Lasers, Plasmas et Procédés photoniques
2 LOA - Laboratoire d'optique appliquée
Abstract : The surface laser-induced damage threshold fluence of sapphire is determined under various experimental conditions concerning the material irradiation (femtosecond, picosecond and nanosecond temporal regimes) and preparation (surface state). The results are of interest for optimising laser micromachining processes and for robust operation of high-peak power femtosecond Ti:sapphire laser chains.
keyword : Laser-induced damage Sapphire Femtosecond Picosecond Nanosecond
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https://hal-ujm.archives-ouvertes.fr/ujm-00376961
Contributor : Tatiana Itina <>
Submitted on : Monday, April 20, 2009 - 3:55:36 PM
Last modification on : Tuesday, November 19, 2019 - 10:18:08 AM

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CNRS | UNIV-ST-ETIENNE | X-LOA | X | UNIV-AMU | ENSTA_LOA | ENSTA | PARISTECH | LP3 | X-DEP-PHYS | UDL

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O. Uteza, Benoît Bussiere, F. Canova, J.-P. Chambaret, Philippe Delaporte, et al.. Laser-induced damage threshold of sapphire in nanosecond, picosecond and femtosecond regimes. Applied Surface Science, Elsevier, 2007, 254 (4), pp.799-803. ⟨10.1016/j.apsusc.2007.09.046⟩. ⟨ujm-00376961⟩

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