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100 nm period grating by high-index phase-mask immersion lithography

Abstract : The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.
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Contributor : Yannick Bourgin Connect in order to contact the contributor
Submitted on : Friday, May 7, 2010 - 3:20:52 PM
Last modification on : Wednesday, August 31, 2022 - 11:26:47 AM

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Yannick Bourgin, Yves Jourlin, Olivier Parriaux, Anne Talneau, Svetlen Tonchev, et al.. 100 nm period grating by high-index phase-mask immersion lithography. Optics Express, Optical Society of America - OSA Publishing, 2010, 18 (10), pp.10557-10566. ⟨10.1364/OE.18.010557⟩. ⟨ujm-00481902⟩



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