100 nm period grating by high-index phase-mask immersion lithography

Yannick Bourgin (1) , Yves Jourlin (1) , Olivier Parriaux (1) , Anne Talneau (2) , Svetlen Tonchev (1, 3) , Colette Veillas (1) , P. Karvinen (4) , Nicolas Passilly (5) , Ahmad Md Zain (6) , R.M. de La Rue (7) , Jurgen van Erps (8) , David Troadec (9)

1 LHC - Laboratoire Hubert Curien [Saint Etienne]
2 LPN - Laboratoire de photonique et de nanostructures
3 ISSP - Institut of the Solid State Physics
4 JOE - University of Joensuu, Department of Physics and Mathematics
5 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)
6 Photonics Research Group, Centre for Communication,
7 Dpt of Electronics & Electrical Engineering
8 TONA - Department of Applied Physics and Photonics [Brussels]
9 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520

The interferogram of a high index phase mask of 200 nm period under normal incidence of a collimated beam at 244 nm wavelength with substantially suppressed zeroth order produces a 100 nm period grating in a resist film under immersion. The paper describes the phase mask design, its fabrication, the effect of electron-beam lithographic stitching errors and optical assessment of the fabricated sub-cutoff grating.

Keywords: Nanostructure fabrication; Nanostructure fabrication; Diffraction gratings; Subwavelength structures; Lithography; Nanostructure fabrication.

Domains: Engineering Sciences [physics]; Optics / Photonic

Yannick Bourgin, Yves Jourlin, Olivier Parriaux, Anne Talneau, Svetlen Tonchev, et al.. 100 nm period grating by high-index phase-mask immersion lithography. Optics Express, 2010, 18 (10), pp.10557-10566. ⟨10.1364/OE.18.010557⟩. ⟨ujm-00481902⟩