Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

Abstract : Optical spectroscopy tests are convenient to probe the electronic structure of thin semiconductor material layers [1, 2]. Based on this background, the present work describes the investigations of ionizing radiation effects induced in thin sSOI devices using confocal microscopy techniques.
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Communication dans un congrès
8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.57, 2010
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https://hal-ujm.archives-ouvertes.fr/ujm-00549355
Contributeur : Youcef Ouerdane <>
Soumis le : mardi 21 décembre 2010 - 17:49:35
Dernière modification le : mercredi 25 juillet 2018 - 14:05:31

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  • HAL Id : ujm-00549355, version 1

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M. Gaillardin, Sébastien Girard, Y. Ouerdane, A. Boukenter, F. Andrieu, et al.. Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.57, 2010. 〈ujm-00549355〉

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