Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

M. Gaillardin 1 Sébastien Girard 2 Y. Ouerdane 3 A. Boukenter 3 F. Andrieu 4 O. Faynot 4
1 DAM - Direction des Applications Militaires
2 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
3 LHC - Laboratoire Hubert Curien [Saint Etienne]
4 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
Abstract : Optical spectroscopy tests are convenient to probe the electronic structure of thin semiconductor material layers [1, 2]. Based on this background, the present work describes the investigations of ionizing radiation effects induced in thin sSOI devices using confocal microscopy techniques.
Document type :
Conference papers
Complete list of metadatas
https://hal-ujm.archives-ouvertes.fr/ujm-00549355
Contributor : Youcef Ouerdane <>
Submitted on : Tuesday, December 21, 2010 - 5:49:35 PM
Last modification on : Monday, February 25, 2019 - 4:34:18 PM

Identifiers

  • HAL Id : ujm-00549355, version 1

Collections

UNIV-ST-ETIENNE | CEA | LAHC | DRT | DAM | LETI | IOGS | PARISTECH | CEA-GRE

Citation

M. Gaillardin, Sébastien Girard, Y. Ouerdane, A. Boukenter, F. Andrieu, et al.. Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.57. ⟨ujm-00549355⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

67

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD