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Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

M. Gaillardin 1 Sébastien Girard 2 y. Ouerdane 3 A. Boukenter 3 F. Andrieu 4 O. Faynot 4 
1 DAM - Direction des Applications Militaires
2 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
3 LHC - Laboratoire Hubert Curien [Saint Etienne]
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
Abstract : Optical spectroscopy tests are convenient to probe the electronic structure of thin semiconductor material layers [1, 2]. Based on this background, the present work describes the investigations of ionizing radiation effects induced in thin sSOI devices using confocal microscopy techniques.
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https://hal-ujm.archives-ouvertes.fr/ujm-00549355
Contributor : Youcef Ouerdane Connect in order to contact the contributor
Submitted on : Tuesday, December 21, 2010 - 5:49:35 PM
Last modification on : Saturday, June 25, 2022 - 7:25:42 PM

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  • HAL Id : ujm-00549355, version 1

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UNIV-ST-ETIENNE | CEA | CNRS | LAHC | DRT | DAM | LETI | CEA-GRE | UDL

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M. Gaillardin, Sébastien Girard, y. Ouerdane, A. Boukenter, F. Andrieu, et al.. Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.57. ⟨ujm-00549355⟩

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