Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

M. Gaillardin (1) , Sébastien Girard (2) , Y. Ouerdane (3) , A. Boukenter (3) , F. Andrieu (4) , O. Faynot (4)

1 DAM - Direction des Applications Militaires
2 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
3 LHC - Laboratoire Hubert Curien
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Optical spectroscopy tests are convenient to probe the electronic structure of thin semiconductor material layers [1, 2]. Based on this background, the present work describes the investigations of ionizing radiation effects induced in thin sSOI devices using confocal microscopy techniques.

Domains: Optics [physics.optics]

M. Gaillardin, Sébastien Girard, Y. Ouerdane, A. Boukenter, F. Andrieu, et al.. Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.57. ⟨ujm-00549355⟩