Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

M. Gaillardin 1 Sébastien Girard 2 Y. Ouerdane 3 A. Boukenter 3 F. Andrieu 4 O. Faynot 4
1 DAM - Direction des Applications Militaires
2 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
3 LHC - Laboratoire Hubert Curien [Saint Etienne]
4 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
Abstract : Optical spectroscopy tests are convenient to probe the electronic structure of thin semiconductor material layers [1, 2]. Based on this background, the present work describes the investigations of ionizing radiation effects induced in thin sSOI devices using confocal microscopy techniques.
Type de document :
Communication dans un congrès
8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.57, 2010
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https://hal-ujm.archives-ouvertes.fr/ujm-00549355
Contributeur : Youcef Ouerdane <>
Soumis le : mardi 21 décembre 2010 - 17:49:35
Dernière modification le : lundi 11 février 2019 - 16:45:33

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  • HAL Id : ujm-00549355, version 1

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M. Gaillardin, Sébastien Girard, Y. Ouerdane, A. Boukenter, F. Andrieu, et al.. Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.57, 2010. 〈ujm-00549355〉

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