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Communication Dans Un Congrès Année : 2010

Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

Résumé

Optical spectroscopy tests are convenient to probe the electronic structure of thin semiconductor material layers [1, 2]. Based on this background, the present work describes the investigations of ionizing radiation effects induced in thin sSOI devices using confocal microscopy techniques.
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Dates et versions

ujm-00549355 , version 1 (21-12-2010)

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  • HAL Id : ujm-00549355 , version 1

Citer

M. Gaillardin, Sébastien Girard, Y. Ouerdane, A. Boukenter, F. Andrieu, et al.. Investigations of the ionizing radiation effects induced in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.57. ⟨ujm-00549355⟩
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