Electronic and optical properties of oxygen deficient centers in silica and germanosilicate glasses beyond the DFT

V. Cuny 1, 2 N. Richard 2 Sébastien Girard 2 L. Martin-Samos 3 A. Boukenter 1 Y. Ouerdane 1 J.-P. Meunier 1
1 LHC - Laboratoire Hubert Curien [Saint Etienne]
2 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
3 Dipartimento di Fisica
Abstract : Electronic and optical properties of point defects present in pure amorphous silica (a-SiO2) and germanosilicate (Ge-doped a-SiO2) systems are of great interest because of their macroscopic consequences on systems as optical fibers or microelectronic devices. Often in the optical fiber, the silica core is doped with germanium to increase its refractive index. The presence of these dopants affects the optical properties of glasses, especially in harsh environments. Ionizing radiation of pure and germanium-doped silica induces several point defects. Oxygen-deficient centers (SiODC and GeODC) play an important role in the degradation of the optical fiber under irradiation, acting as precursor sites for the generation of other defects or being created through a knock-on process.
Type de document :
Communication dans un congrès
8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.48, 2010
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https://hal-ujm.archives-ouvertes.fr/ujm-00549366
Contributeur : Youcef Ouerdane <>
Soumis le : mardi 21 décembre 2010 - 18:09:46
Dernière modification le : mercredi 25 juillet 2018 - 14:05:31

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  • HAL Id : ujm-00549366, version 1

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UNIV-ST-ETIENNE | CEA | LAHC | IOGS | PARISTECH

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V. Cuny, N. Richard, Sébastien Girard, L. Martin-Samos, A. Boukenter, et al.. Electronic and optical properties of oxygen deficient centers in silica and germanosilicate glasses beyond the DFT. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.48, 2010. 〈ujm-00549366〉

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