X-ray irradiation effects on a specific multistep Ge-doped fiber

A. Alessi 1, 2 Sébastien Girard 3 C. Marcandella 3 S. Agnello 2 Marco Cannas 2 A. Boukenter 1 Y. Ouerdane 1
1 LHC - Laboratoire Hubert Curien [Saint Etienne]
2 DIPARTIMENTO DI SCIENZE FISICHE ED ASTRONOMICHE, UNIVERSITà DI PALERMO - Dipartimento di Scienze Fisiche ed Astronomiche, Università di Palermo
3 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
Abstract : The study of point defects generation in optical fibers plays an important role with regards to their use and application in different domains. Their design and elaboration processes (dopants type, concentration, refractive index profile, drawing conditions...) govern their responses and more generally their radiation hardness [1]. In this work we investigated, the influence of 10 keV X-ray irradiations on a set of specific germanosilicate optical fibers elaborated from the same preform at different drawing conditions. The germanium doping levels along the fiber core diameter was specifically designed to follow a two-step distribution in order to highlight the Ge-concentration effect and more generally its influence on the Ge-defects formation such as the Germanium Lone Pair Center (GLPC) [2], or more generally on the generation of other centers such as the Non Bridging Oxygen Hole Center (NBOHCs).
Type de document :
Communication dans un congrès
8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.41, 2010
Liste complète des métadonnées
https://hal-ujm.archives-ouvertes.fr/ujm-00549375
Contributeur : Youcef Ouerdane <>
Soumis le : mardi 21 décembre 2010 - 18:18:08
Dernière modification le : mercredi 25 juillet 2018 - 14:05:31

Identifiants

  • HAL Id : ujm-00549375, version 1

Collections

UNIV-ST-ETIENNE | CEA | LAHC | IOGS | PARISTECH

Citation

A. Alessi, Sébastien Girard, C. Marcandella, S. Agnello, Marco Cannas, et al.. X-ray irradiation effects on a specific multistep Ge-doped fiber. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.41, 2010. 〈ujm-00549375〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

53

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD