Effects of Germanium doping on the structural and electronic properties of amorphous silica

N. Richard 1 V. Cuny 1, 2 Sébastien Girard 1 L. Martin-Samos 3 A. Boukenter 2 Y. Ouerdane 2 J.-P. Meunier 2
1 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 Dipartimento di Fisica
Abstract : Germanium doped silica is widely used in microelectronic and optoelectronic devices. For example, in optical fibers, germanium is used to increase the refractive index of the silica-based core. Furthermore, in microelectronics, due to the aggressive. Downscaling of technologies, germanium substrate and consequently germanium oxide is gaining considerable interest. ln the present study, we perfonned ab initio calculations to understand the effects of this doping on the properties of silica and to compare the properties at atomic scale of silica and germanium dioxide.
Type de document :
Communication dans un congrès
8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.40, 2010
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https://hal-ujm.archives-ouvertes.fr/ujm-00549378
Contributeur : Youcef Ouerdane <>
Soumis le : mardi 21 décembre 2010 - 18:21:40
Dernière modification le : mercredi 25 juillet 2018 - 14:05:31

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  • HAL Id : ujm-00549378, version 1

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UNIV-ST-ETIENNE | CEA | LAHC | IOGS | PARISTECH

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N. Richard, V. Cuny, Sébastien Girard, L. Martin-Samos, A. Boukenter, et al.. Effects of Germanium doping on the structural and electronic properties of amorphous silica. 8th symposium SiO2, Advanced Dielectrics and Related Devices,, Jun 2010, Varenna, Italy. pp.40, 2010. 〈ujm-00549378〉

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