Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

Abstract : This study describes investigations on the ionizing radiation effects induced in ultra-thin Silicon-On-Insulator (SOI) devices. Electrical tests exhibit various behaviors after irradiation which depends on the intrinsic mechanical stress of the thin silicon film. The electrical characteristics of strained Silicon-On-Insulator devices evidence a decrease of the subthreshold slope that may be related to a radiation induced degradation of the carrier mobility. This appears in addition to the deviation of the threshold voltage classically observed on irradiated Silicon-On-Insulator samples. The major issue discussed in this paper is whether a strain relaxation or the buildup of interface states at strained silicon/silica interfaces leads to the observed carrier mobility degradation. Radiation-induced mechanisms are then discussed with electrical measurements and optical spectra obtained by confocal microscopy measurements which have already demonstrated their potential to probe irradiated materials.
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Journal of Non-Crystalline Solids, Elsevier, 2011, 357, pp.1989-1993. 〈10.1016/j.jnoncrysol.2010.12.072〉
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https://hal-ujm.archives-ouvertes.fr/ujm-00587483
Contributeur : Youcef Ouerdane <>
Soumis le : mercredi 20 avril 2011 - 15:00:46
Dernière modification le : lundi 15 octobre 2018 - 15:46:02

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M. Gaillardin, Sébastien Girard, Y. Ouerdane, A. Boukenter, F. Andrieu, et al.. Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements. Journal of Non-Crystalline Solids, Elsevier, 2011, 357, pp.1989-1993. 〈10.1016/j.jnoncrysol.2010.12.072〉. 〈ujm-00587483〉

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