Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements - Université Jean-Monnet-Saint-Étienne Accéder directement au contenu
Article Dans Une Revue Journal of Non-Crystalline Solids Année : 2011

Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements

Résumé

This study describes investigations on the ionizing radiation effects induced in ultra-thin Silicon-On-Insulator (SOI) devices. Electrical tests exhibit various behaviors after irradiation which depends on the intrinsic mechanical stress of the thin silicon film. The electrical characteristics of strained Silicon-On-Insulator devices evidence a decrease of the subthreshold slope that may be related to a radiation induced degradation of the carrier mobility. This appears in addition to the deviation of the threshold voltage classically observed on irradiated Silicon-On-Insulator samples. The major issue discussed in this paper is whether a strain relaxation or the buildup of interface states at strained silicon/silica interfaces leads to the observed carrier mobility degradation. Radiation-induced mechanisms are then discussed with electrical measurements and optical spectra obtained by confocal microscopy measurements which have already demonstrated their potential to probe irradiated materials.

Dates et versions

ujm-00587483 , version 1 (20-04-2011)

Identifiants

Citer

M. Gaillardin, Sébastien Girard, Y. Ouerdane, A. Boukenter, F. Andrieu, et al.. Investigations of the ionizing radiation induced effects in ultra-thin strained-silicon layers on insulator using confocal microscopy measurements. Journal of Non-Crystalline Solids, 2011, 357, pp.1989-1993. ⟨10.1016/j.jnoncrysol.2010.12.072⟩. ⟨ujm-00587483⟩
32 Consultations
0 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More