Expanding the applicability domain of phase-mask lithography of gratings to the extreme

Yannick Bourgin 1 Yves Jourlin 1 Svetlen Tonchev 1, 2 Ismo Vartiainen 3 Olivier Parriaux 1 Markku Kuittinen 3 Anne Talneau 4
1 LHC - Laboratoire Hubert Curien [Saint Etienne]
2 ISSP - Institute of Solid State Physics
3 department of physics and mathematics- campus of Joensuu
4 LPN - Laboratoire de photonique et de nanostructures
Abstract : The applicability domain of phase-masks for the manufacturing of gratings is widely expanded by breaking the limits of a so far very narrow spatial frequency spectral width. This is a result of searching for high index deep-UV film materials and of resorting to a novel phase-mask scheme at the large period side.
Type de document :
Communication dans un congrès
2nd EOS Conference on Manufacturing of Optical Components (EOSMOC 2011), May 2011, Munich, Germany. pp.4391, 2011
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https://hal-ujm.archives-ouvertes.fr/ujm-00602526
Contributeur : Yannick Bourgin <>
Soumis le : mercredi 22 juin 2011 - 17:30:48
Dernière modification le : mercredi 25 juillet 2018 - 14:05:30

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  • HAL Id : ujm-00602526, version 1

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UNIV-ST-ETIENNE | LAHC | IOGS | PARISTECH

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Yannick Bourgin, Yves Jourlin, Svetlen Tonchev, Ismo Vartiainen, Olivier Parriaux, et al.. Expanding the applicability domain of phase-mask lithography of gratings to the extreme. 2nd EOS Conference on Manufacturing of Optical Components (EOSMOC 2011), May 2011, Munich, Germany. pp.4391, 2011. 〈ujm-00602526〉

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