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Université Jean Monnet – Saint-Etienne |  |
Conference papers
Numerical study of femtosecond laser-assisted atom probe tomography
Abstract : We investigate the mechanisms of laser-assisted atom probe tomography technique. In this method, a sub-wavelength tip is subjected both to a very strong static electric field and to a femtosecond laser pulse. As a result, ions are ejected from the tip one by one. By using femtosecond lasers, one can analyze not only metals but also semiconductors and dielectric materials. To better understand the ejection process, a numerical model is developed based on the drift-diffusion approach. The model accounts for such effects as field penetration, hole and electron movement, and laser absorption. For the given value of the dc field, a substantial band bending and an increase in hole density at the surface of silicon tip are observed. This bending effect changes silicon absorption coefficient at the surface and significantly increases recombination time of laser-induced carriers.
Keywords :
femtosecond laser
atomic prob
https://hal-ujm.archives-ouvertes.fr/ujm-00710834
Contributor : Tatiana Itina Connect in order to contact the contributor
Submitted on : Thursday, June 21, 2012 - 4:35:10 PM
Last modification on : Tuesday, October 19, 2021 - 4:14:14 PM
Contributor : Tatiana Itina Connect in order to contact the contributor
Submitted on : Thursday, June 21, 2012 - 4:35:10 PM
Last modification on : Tuesday, October 19, 2021 - 4:14:14 PM