Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors - Université Jean-Monnet-Saint-Étienne Access content directly
Conference Papers Year : 2012

Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors

Elena Silaeva
  • Function : Author
Laboratoire Hubert Curien
Complexe de recherche interprofessionnel en aérothermochimie
Tatiana Itina
Laboratoire Hubert Curien
Angela Vella
CV
B. Deconihout
CV

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Chemical and Process Engineering

Tatiana Itina  : Connect in order to contact the contributor

https://hal-ujm.archives-ouvertes.fr/ujm-00711690

Submitted on : Monday, June 25, 2012-2:56:41 PM

Last modification on : Friday, March 24, 2023-2:52:55 PM

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ujm-00711690 , version 1 (25-06-2012)

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  • HAL Id : ujm-00711690 , version 1

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Elena Silaeva, Tatiana Itina, Angela Vella, B. Deconihout. Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors. International Field Emission Society (IFES) 2012, May 2012, Alabama, United States. ⟨ujm-00711690⟩

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