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Conference papers

Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors

Elena Silaeva 1, 2 Tatiana Itina 1 Angela Vella B. Deconihout 
1 LHC - Laboratoire Hubert Curien [Saint Etienne]
2 CORIA - Complexe de recherche interprofessionnel en aérothermochimie
Keywords : laser assisted atomic prob model
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Conference papers
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https://hal-ujm.archives-ouvertes.fr/ujm-00711690
Contributor : Tatiana Itina Connect in order to contact the contributor
Submitted on : Monday, June 25, 2012 - 2:56:41 PM
Last modification on : Saturday, June 25, 2022 - 10:53:44 AM

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  • HAL Id : ujm-00711690, version 1

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UNIV-ST-ETIENNE | CNRS | INSA-ROUEN | LAHC | CORIA | COMUE-NORMANDIE | UNIROUEN | INSA-GROUPE | UDL

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Elena Silaeva, Tatiana Itina, Angela Vella, B. Deconihout. Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors. International Field Emission Society (IFES) 2012, May 2012, Alabama, United States. ⟨ujm-00711690⟩

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