Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors

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https://hal-ujm.archives-ouvertes.fr/ujm-00711690
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Submitted on : Monday, June 25, 2012 - 2:56:41 PM
Last modification on : Thursday, May 16, 2019 - 3:58:14 PM

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  • HAL Id : ujm-00711690, version 1

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Elena Silaeva, Tatiana Itina, Angela Vella, B. Deconihout. Role of surface band bending and hole accumulation in laser-assisted field evaporation of semiconductors. International Field Emission Society (IFES) 2012, May 2012, Alabama, United States. ⟨ujm-00711690⟩

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