First-principles study of electronic and optical properties of intrinsic defects in a-SiO2

L. Martin-Samos 1 N. Richard 2 Sébastien Girard 2 A. Boukenter 3 Y. Ouerdane 3 J.-P. Meunier 3
1 Dipartimento di Fisica
2 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
3 LHC - Laboratoire Hubert Curien [Saint Etienne]
Abstract : We calculated the electronic and optical properties of intrinsic point defects in pure and doped amorphous silica by using the Many Body Perturbation Theory to the Density Functional Theory. These calculations allow us to analyze the chemical nature of the transition responsible for the defect optical absorption bands.
Keywords : density functional theory many body perturbation theory silica point defects optical properties
Document type :
Conference papers
Complete list of metadatas
https://hal-ujm.archives-ouvertes.fr/ujm-00732503
Contributor : Youcef Ouerdane <>
Submitted on : Friday, September 14, 2012 - 7:02:16 PM
Last modification on : Tuesday, August 6, 2019 - 9:02:30 AM

Identifiers

  • HAL Id : ujm-00732503, version 1

Collections

UNIV-ST-ETIENNE | CEA | CNRS | LAHC | IOGS | PARISTECH

Citation

L. Martin-Samos, N. Richard, Sébastien Girard, A. Boukenter, Y. Ouerdane, et al.. First-principles study of electronic and optical properties of intrinsic defects in a-SiO2. Si02 Advanced Dielectrics and Related Devices, Jun 2012, Hyères, France. pp.75-76. ⟨ujm-00732503⟩

Export

BibTeX TEI DC DCterms EndNote

Share

Metrics

Record views

128

Contact

CCSD