First-principles study of electronic and optical properties of intrinsic defects in a-SiO2

Abstract : We calculated the electronic and optical properties of intrinsic point defects in pure and doped amorphous silica by using the Many Body Perturbation Theory to the Density Functional Theory. These calculations allow us to analyze the chemical nature of the transition responsible for the defect optical absorption bands.
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Communication dans un congrès
Si02 Advanced Dielectrics and Related Devices, Jun 2012, Hyères, France. pp.75-76, 2012
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https://hal-ujm.archives-ouvertes.fr/ujm-00732503
Contributeur : Youcef Ouerdane <>
Soumis le : vendredi 14 septembre 2012 - 19:02:16
Dernière modification le : mercredi 25 juillet 2018 - 14:05:30

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  • HAL Id : ujm-00732503, version 1

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L. Martin-Samos, N. Richard, Sébastien Girard, A. Boukenter, Y. Ouerdane, et al.. First-principles study of electronic and optical properties of intrinsic defects in a-SiO2. Si02 Advanced Dielectrics and Related Devices, Jun 2012, Hyères, France. pp.75-76, 2012. 〈ujm-00732503〉

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