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Conference Papers Conference book Year : 2012

First-principles study of electronic and optical properties of intrinsic defects in a-SiO2

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Abstract

We calculated the electronic and optical properties of intrinsic point defects in pure and doped amorphous silica by using the Many Body Perturbation Theory to the Density Functional Theory. These calculations allow us to analyze the chemical nature of the transition responsible for the defect optical absorption bands.
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Dates and versions

ujm-00732503 , version 1 (14-09-2012)

Identifiers

  • HAL Id : ujm-00732503 , version 1

Cite

L. Martin-Samos, N. Richard, Sébastien Girard, A. Boukenter, Y. Ouerdane, et al.. First-principles study of electronic and optical properties of intrinsic defects in a-SiO2. Si02 Advanced Dielectrics and Related Devices, Jun 2012, Hyères, France. pp.75-76. ⟨ujm-00732503⟩
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