First-principles study of electronic and optical properties of intrinsic defects in a-SiO2

L. Martin-Samos 1 N. Richard 2 Sébastien Girard 2 A. Boukenter 3 Y. Ouerdane 3 J.-P. Meunier 3
1 Dipartimento di Fisica
2 DCRE CEA - Département de Conception et Réalisation des Experimentations, CEA-DIF
3 LHC - Laboratoire Hubert Curien [Saint Etienne]
Abstract : We calculated the electronic and optical properties of intrinsic point defects in pure and doped amorphous silica by using the Many Body Perturbation Theory to the Density Functional Theory. These calculations allow us to analyze the chemical nature of the transition responsible for the defect optical absorption bands.
Keywords : density functional theory many body perturbation theory silica point defects optical properties
Type de document :
Communication dans un congrès
Si02 Advanced Dielectrics and Related Devices, Jun 2012, Hyères, France. pp.75-76, 2012
Liste complète des métadonnées
https://hal-ujm.archives-ouvertes.fr/ujm-00732503
Contributeur : Youcef Ouerdane <>
Soumis le : vendredi 14 septembre 2012 - 19:02:16
Dernière modification le : jeudi 11 janvier 2018 - 06:20:35

Identifiants

  • HAL Id : ujm-00732503, version 1

Collections

UNIV-ST-ETIENNE | CEA | LAHC

Citation

L. Martin-Samos, N. Richard, Sébastien Girard, A. Boukenter, Y. Ouerdane, et al.. First-principles study of electronic and optical properties of intrinsic defects in a-SiO2. Si02 Advanced Dielectrics and Related Devices, Jun 2012, Hyères, France. pp.75-76, 2012. 〈ujm-00732503〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

113

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD