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Université Jean Monnet – Saint-Etienne |  |
Conference papers
Influence of argon flow rate on YIG film deposited by Radio-frequency reactive magnetron sputtering
B. Abdel Samad
1
M.-F. Blanc-Mignon
1
Mohamad Roumie
2
Jean-Pierre Chatelon
3
A. Siblini
1
Damien Jamon
1
M. Korek
B. Abdel Samad 1
Author
M.-F. Blanc-Mignon 1
Author
Mohamad Roumie 2
Author
Jean-Pierre Chatelon 3
Author IdHAL : jean-pierre-chatelon
A. Siblini 1
Author
Damien Jamon 1
Author IdHAL : damien-jamon ORCID : https://orcid.org/0000-0001-5218-0793
M. Korek
Author
1
DIOM - Dispositifs et Instrumentation en Optoélectronique et micro-ondes (France)
- UJM - Université Jean Monnet [Saint-Étienne] : EA3523 (10 rue Tréfilerie - 42100 Saint-Étienne - France)
3
LT2C - Laboratoire Telecom Claude Chappe (LT2C Télécom Saint-Etienne 25 rue Dr Rémy Annino 42000 Saint-Etienne Cedex 2 - France)
- UJM - Université Jean Monnet [Saint-Étienne] : EA3523 (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- Ecole d'ingenieurs Telecom Saint Etienne (France)
Document type :
Conference papers
Complete list of metadata
https://hal-ujm.archives-ouvertes.fr/ujm-00795868
Contributor : Jean-Pierre Chatelon <>
Submitted on : Friday, March 1, 2013 - 9:33:49 AM
Last modification on : Thursday, November 21, 2019 - 2:21:07 AM
Contributor : Jean-Pierre Chatelon <>
Submitted on : Friday, March 1, 2013 - 9:33:49 AM
Last modification on : Thursday, November 21, 2019 - 2:21:07 AM
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- HAL Id : ujm-00795868, version 1
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Citation
B. Abdel Samad, M.-F. Blanc-Mignon, Mohamad Roumie, Jean-Pierre Chatelon, A. Siblini, et al.. Influence of argon flow rate on YIG film deposited by Radio-frequency reactive magnetron sputtering. Seeheim Conference on Magnetism, Mar 2010, Frankfurt, Germany. ⟨ujm-00795868⟩
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