Influence of argon flow rate on YIG film deposited by Radio-frequency reactive magnetron sputtering

B. Abdel Samad; M.-F. Blanc-Mignon; Mohamad Roumie; Jean-Pierre Chatelon; A. Siblini; Damien Jamon; M. Korek

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Influence of argon flow rate on YIG film deposited by Radio-frequency reactive magnetron sputtering

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B. Abdel Samad

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PersonId : 897636

Dispositifs et Instrumentation en Optoélectronique et micro-ondes

M.-F. Blanc-Mignon

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PersonId : 841935

Dispositifs et Instrumentation en Optoélectronique et micro-ondes

Mohamad Roumie

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Lebanese Atomic Energy Commission

Jean-Pierre Chatelon

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IdHAL : jean-pierre-chatelon
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Laboratoire Telecom Claude Chappe

A. Siblini

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PersonId : 841933

Dispositifs et Instrumentation en Optoélectronique et micro-ondes

Damien Jamon

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IdHAL : damien-jamon
ORCID : 0000-0001-5218-0793
IdRef : 122878108

Dispositifs et Instrumentation en Optoélectronique et micro-ondes

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M. Korek

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Micro and nanotechnologies/Microelectronics

Jean-Pierre Chatelon : Connect in order to contact the contributor

https://hal-ujm.archives-ouvertes.fr/ujm-00795868

Submitted on : Friday, March 1, 2013-9:33:49 AM

Last modification on : Monday, April 3, 2023-6:16:08 PM

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ujm-00795868 , version 1 (01-03-2013)

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HAL Id : ujm-00795868 , version 1

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B. Abdel Samad, M.-F. Blanc-Mignon, Mohamad Roumie, Jean-Pierre Chatelon, A. Siblini, et al.. Influence of argon flow rate on YIG film deposited by Radio-frequency reactive magnetron sputtering. Seeheim Conference on Magnetism, Mar 2010, Frankfurt, Germany. ⟨ujm-00795868⟩

Influence of argon flow rate on YIG film deposited by Radio-frequency reactive magnetron sputtering

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