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The effect of oxygen flow rate on the properties of YIG thin films prepared by rf-magnetron sputtering

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B. Abdel Samad
  • Function : Author
  • PersonId : 897636
Laboratoire Telecom Claude Chappe
A. Siblini
  • Function : Author
  • PersonId : 841933
Laboratoire Telecom Claude Chappe
M.-F. Blanc-Mignon
  • Function : Author
  • PersonId : 841935
Laboratoire Telecom Claude Chappe
Mohamad Roumie
  • Function : Author
Lebanese Atomic Energy Commission
Jean-Pierre Chatelon
Laboratoire Telecom Claude Chappe
M. Korek
  • Function : Author

Domains

Engineering Sciences [physics] Micro and nanotechnologies/Microelectronics

Jean-Pierre Chatelon  : Connect in order to contact the contributor

https://hal-ujm.archives-ouvertes.fr/ujm-00795876

Submitted on : Friday, March 1, 2013-9:42:16 AM

Last modification on : Monday, December 12, 2022-5:26:13 PM

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ujm-00795876 , version 1 (01-03-2013)

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  • HAL Id : ujm-00795876 , version 1

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B. Abdel Samad, A. Siblini, M.-F. Blanc-Mignon, Mohamad Roumie, Jean-Pierre Chatelon, et al.. The effect of oxygen flow rate on the properties of YIG thin films prepared by rf-magnetron sputtering. Mediterranean Conference on Innovative Materials and Applications (CIMA), Mar 2011, Beirut, Lebanon. ⟨ujm-00795876⟩

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