Abstract : We investigate Single-Event Transients (SET) in various designs of multiple-gate devices: FinFETs and nanowires. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
Type de document :
Communication dans un congrès
IEEE Nuclear and Space Radiation Effects Conference (NSREC 2013), Jul 2013, San Francisco, United States
https://hal-ujm.archives-ouvertes.fr/ujm-00844900
Contributeur : Sylvain Girard
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Soumis le : mardi 16 juillet 2013 - 10:53:23
Dernière modification le : jeudi 29 mars 2018 - 09:04:04
M. Gaillardin, Melanie Raine, P. Paillet, Sylvain Girard, P. Adell, et al.. Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2013), Jul 2013, San Francisco, United States. 〈ujm-00844900〉
