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Conference papers

Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires

M. Gaillardin 1 Melanie Raine 1 P. Paillet 1 Sylvain Girard 2 P. Adell 3 O. Duhamel 1 F. Andrieu 4 S. Barraud 4 O. Faynot 4
1 DAM/DIF - DAM Île-de-France
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 JPL - Jet Propulsion Laboratory
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
Abstract : We investigate Single-Event Transients (SET) in various designs of multiple-gate devices: FinFETs and nanowires. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
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Conference papers
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https://hal-ujm.archives-ouvertes.fr/ujm-00844900
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Tuesday, July 16, 2013 - 10:53:23 AM
Last modification on : Tuesday, January 12, 2021 - 6:24:01 PM

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  • HAL Id : ujm-00844900, version 1

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UNIV-ST-ETIENNE | CEA | CNRS | LAHC | DRT | LETI | IOGS | PARISTECH | DAM | LABEXIMU | CEA-GRE | UDL

Citation

M. Gaillardin, Melanie Raine, P. Paillet, Sylvain Girard, P. Adell, et al.. Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2013), Jul 2013, San Francisco, United States. ⟨ujm-00844900⟩

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