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Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires

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Abstract

We investigate Single-Event Transients (SET) in various designs of multiple-gate devices: FinFETs and nanowires. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
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Dates and versions

ujm-00844900 , version 1 (16-07-2013)

Identifiers

  • HAL Id : ujm-00844900 , version 1

Cite

M. Gaillardin, Melanie Raine, P. Paillet, Sylvain Girard, P. Adell, et al.. Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2013), Jul 2013, San Francisco, United States. ⟨ujm-00844900⟩
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