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Université Jean Monnet – Saint-Etienne |  |
Conference papers
Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires
M. Gaillardin
1
Melanie Raine
1
P. Paillet
1
Sylvain Girard
2
P. Adell
3
O. Duhamel
1
F. Andrieu
4
S. Barraud
4
O. Faynot
4
M. Gaillardin 1
Author
Melanie Raine 1
Author
P. Paillet 1
Author
Sylvain Girard 2
Mail :
Author IdHAL : sylvain-girard-ujm
O. Faynot 4
Author
1
DAM/DIF - DAM Île-de-France (CEA Bruyères-le-Châtel 91297 Arpajon cedex - France)
- DAM - Direction des Applications Militaires : DAM/DIF (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DAM (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
2
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
3
JPL - Jet Propulsion Laboratory (4800 Oak Grove Drive, Pasadena, CA 91109-8099, USA - United States)
- CALTECH - California Institute of Technology (1200 East California Blvd, Pasadena, California 91125 - United States)
- NASA (www.nasa.gov - United States)
4
CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9 - France)
- UGA - Université Grenoble Alpes (CS 40700 - 38058 Grenoble cedex - France)
- DRT (CEA) - Direction de Recherche Technologique (CEA) : DRT (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRT (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
Abstract : We investigate Single-Event Transients (SET) in various designs of multiple-gate devices: FinFETs and nanowires. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
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Complete list of metadatas
https://hal-ujm.archives-ouvertes.fr/ujm-00844900
Contributor : Sylvain Girard <>
Submitted on : Tuesday, July 16, 2013 - 10:53:23 AM
Last modification on : Monday, April 6, 2020 - 9:22:29 AM
Contributor : Sylvain Girard <>
Submitted on : Tuesday, July 16, 2013 - 10:53:23 AM
Last modification on : Monday, April 6, 2020 - 9:22:29 AM
Identifiers
- HAL Id : ujm-00844900, version 1
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Citation
M. Gaillardin, Melanie Raine, P. Paillet, Sylvain Girard, P. Adell, et al.. Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2013), Jul 2013, San Francisco, United States. ⟨ujm-00844900⟩
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