Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires

M. Gaillardin (1) , Melanie Raine (1) , P. Paillet (1) , Sylvain Girard (2) , P. Adell (3) , O. Duhamel (1) , F. Andrieu (4) , S. Barraud (4) , O. Faynot (4)

1 DAM/DIF - DAM Île-de-France
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 JPL - Jet Propulsion Laboratory
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We investigate Single-Event Transients (SET) in various designs of multiple-gate devices: FinFETs and nanowires. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.

Domains: Engineering Sciences [physics]; Electronics

M. Gaillardin, Melanie Raine, P. Paillet, Sylvain Girard, P. Adell, et al.. Charge Collection Analysis under Heavy Ion Irradiation in Multiple-Gate Devices: FinFETs and Nanowires. IEEE Nuclear and Space Radiation Effects Conference (NSREC 2013), Jul 2013, San Francisco, United States. ⟨ujm-00844900⟩