Dark Current Random Telegraph Signals in Solid-State Image Sensors

Abstract : This paper is focused on the Dark Current-Random Telegraph Signal (DC-RTS) in solid-state image sensors. The DCRTS is investigated in several bulk materials, for different surface interfaces and for different trench isolation interfaces. The main parameter used to characterize the DC-RTS is the transition maximum amplitude which seems to be the suitable one to study the phenomenon and discriminate the origin. Proton, neutron and Co-60 Gamma-ray irradiations are used to study DC-RTS induced by both Total Ionizing Dose (TID) and Displacement damage (Dd). Conclusions are made regarding correlation between the slope of the transition maximum amplitude histogram and the location of the DC-RTS-induced defects.