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Université Jean Monnet – Saint-Etienne |  |
Conference papers
High Total Ionizing Dose and Temperature Effects on Micro- and Nano-electronic Devices
M. Gaillardin
1
Martial Martinea
1
Sylvain Girard
2
V. Goiffon
3
P. Paillet
1
Jean-Luc Leray
1
P. Magnan
3
Youcef Ouerdane
2
Aziz Boukenter
2
Claude Marcandella
1
O. Duhamel
1
Melanie Raine
1
Nicolas Richard
1
F. Andrieu
4
S. Barraud
4
O. Faynot
4
M. Gaillardin 1
Author
Martial Martinea 1
Author
Sylvain Girard 2
Author IdHAL : sylvain-girard-ujm
V. Goiffon 3
Author
P. Paillet 1
Author IdHAL : patrick-paillet ORCID : https://orcid.org/0000-0001-6975-4343
Jean-Luc Leray 1
Author
P. Magnan 3
Author
Youcef Ouerdane 2
Author IdHAL : youcef-ouerdane arXiv : https://arxiv.org/a/Y. Ouerdane ORCID : https://orcid.org/0000-0002-7210-0014 VIAF : https://viaf.org/viaf/Y. Ouerdane
Aziz Boukenter 2
Author IdHAL : boukente ORCID : https://orcid.org/0000-0001-9850-5389
Claude Marcandella 1
Author
O. Duhamel 1
Author
Melanie Raine 1
Author
1
DAM/DIF - DAM Île-de-France (CEA Bruyères-le-Châtel 91297 Arpajon cedex - France)
- DAM - Direction des Applications Militaires : DAM/DIF (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DAM (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
2
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
3
ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace (ISAE - 10 av. Edouard Belin - BP 54032 - 31055 TOULOUSE Cedex 4 - France)
4
CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9 - France)
- DRT (CEA) - Direction de Recherche Technologique (CEA) : DRT (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRT (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
Abstract : This paper investigates the vulnerability of several micro- and nano-electronic technologies to a mixed harsh environment including high total ionizing dose at MGy levels and high temperature. Such operating conditions have been revealed recently for several applications like new security systems in existing or future nuclear power plants, fusion experiments, or deep space missions. In this work, the competing effects already reported in the literature of ionizing radiations and temperature are characterized in elementary devices made of MOS transistors from several technologies. First, devices are irradiated using a radiation laboratory source up to MGy dose levels at room temperature. Devices are grounded during irradiation to simulate a circuit which waits for a wake up signal, actually most of the lifetime of an integrated circuit operating in a harsh environment. Devices are then annealed at several temperatures to discuss the post-irradiation behavior and to balance if an elevated temperature is whether an issue or not for circuit function in mixed harsh environments.
Document type :
Conference papers
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https://hal-ujm.archives-ouvertes.fr/ujm-00845006
Contributor : Sylvain Girard <>
Submitted on : Tuesday, July 16, 2013 - 12:09:07 PM
Last modification on : Tuesday, January 12, 2021 - 6:24:01 PM
Contributor : Sylvain Girard <>
Submitted on : Tuesday, July 16, 2013 - 12:09:07 PM
Last modification on : Tuesday, January 12, 2021 - 6:24:01 PM
Identifiers
- HAL Id : ujm-00845006, version 1
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Citation
M. Gaillardin, Martial Martinea, Sylvain Girard, V. Goiffon, P. Paillet, et al.. High Total Ionizing Dose and Temperature Effects on Micro- and Nano-electronic Devices. ANIMMA 2013, Jun 2013, Marseille, France. pp.XX. ⟨ujm-00845006⟩
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