Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Abstract : In this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices.
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IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2583 - 2589. 〈10.1109/TNS.2013.2249093〉
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https://hal-ujm.archives-ouvertes.fr/ujm-00854034
Contributeur : Sylvain Girard <>
Soumis le : lundi 26 août 2013 - 10:42:16
Dernière modification le : jeudi 26 juillet 2018 - 12:09:45

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M. Gaillardin, M. Martinez, Philippe Paillet, F. Andrieu, Sylvain Girard, et al.. Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2583 - 2589. 〈10.1109/TNS.2013.2249093〉. 〈ujm-00854034〉

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