Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2013

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

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Abstract

In this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices.
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Dates and versions

ujm-00854034 , version 1 (26-08-2013)

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Cite

M. Gaillardin, M. Martinez, Philippe Paillet, F. Andrieu, Sylvain Girard, et al.. Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node. IEEE Transactions on Nuclear Science, 2013, 60 (4), pp.2583 - 2589. ⟨10.1109/TNS.2013.2249093⟩. ⟨ujm-00854034⟩
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