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Journal articles
Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node
M. Gaillardin
1
M. Martinez
1
Philippe Paillet
1
F. Andrieu
2
Sylvain Girard
3
Melanie Raine
1
Claude Marcandella
1
Nicolas Richard
1
O. Faynot
2
Sylvain Girard 3
Author IdHAL : sylvain-girard-ujm
Melanie Raine 1
Author
Claude Marcandella 1
Author
Nicolas Richard 1
Author
O. Faynot 2
Author
1
DAM/DIF - DAM Île-de-France (CEA Bruyères-le-Châtel 91297 Arpajon cedex - France)
- DAM - Direction des Applications Militaires : DAM/DIF (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DAM (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
2
CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9 - France)
- DRT (CEA) - Direction de Recherche Technologique (CEA) : DRT (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRT (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
3
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
Abstract : In this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices.
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-00854034
Contributor : Sylvain Girard <>
Submitted on : Monday, August 26, 2013 - 10:42:16 AM
Last modification on : Thursday, June 11, 2020 - 5:04:05 PM
Contributor : Sylvain Girard <>
Submitted on : Monday, August 26, 2013 - 10:42:16 AM
Last modification on : Thursday, June 11, 2020 - 5:04:05 PM
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- HAL Id : ujm-00854034, version 1
- DOI : 10.1109/TNS.2013.2249093
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Citation
M. Gaillardin, M. Martinez, Philippe Paillet, F. Andrieu, Sylvain Girard, et al.. Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2583 - 2589. ⟨10.1109/TNS.2013.2249093⟩. ⟨ujm-00854034⟩
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