Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

M. Gaillardin 1 M. Martinez 1 Philippe Paillet 1 F. Andrieu 2 Sylvain Girard 3 Melanie Raine 1 Claude Marcandella 1 Nicolas Richard 1 O. Faynot 2
1 DAM/DIF - DAM Île-de-France
2 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
3 LHC - Laboratoire Hubert Curien [Saint Etienne]
Abstract : In this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices.
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-00854034
Contributor : Sylvain Girard <>
Submitted on : Monday, August 26, 2013 - 10:42:16 AM
Last modification on : Thursday, September 5, 2019 - 10:40:15 AM

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M. Gaillardin, M. Martinez, Philippe Paillet, F. Andrieu, Sylvain Girard, et al.. Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2583 - 2589. ⟨10.1109/TNS.2013.2249093⟩. ⟨ujm-00854034⟩

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