Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node - Université Jean-Monnet-Saint-Étienne Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2013

Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node

Résumé

In this paper we investigate the Total Ionizing Dose (TID) response of an UltraThin Buried-OXide (UTBOX) on a Fully Depleted Silicon-On-Insulator (FDSOI) high-k/metal gate technology. The impact of thinning the BOX and of the use of a Ground Plane (GP) at the back side of the BOX on the TID behavior are discussed by comparing their results to ionizing radiation experiments performed on reference FDSOI devices.

Domaines

Electronique
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Dates et versions

ujm-00854034 , version 1 (26-08-2013)

Identifiants

Citer

M. Gaillardin, M. Martinez, Philippe Paillet, F. Andrieu, Sylvain Girard, et al.. Impact of SOI Substrate on the Radiation Response of UltraThin Transistors Down to the 20 nm Node. IEEE Transactions on Nuclear Science, 2013, 60 (4), pp.2583 - 2589. ⟨10.1109/TNS.2013.2249093⟩. ⟨ujm-00854034⟩
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