Abstract : This paper investigates the TID sensitivity of silicon-based technologies at several MGy irradiation doses to evaluate their potential for high TID-hardened circuits. Such circuits will be used in several specific applications suc as safety systems of current or future nuclear power plants considering various radiation environments including normal and accidental operating conditions, high energy physics instruments, fusion experiments or deep space missions. Various device designs implemented in well established bulk silicon and Partially Depleted SOI technologies are studied here up to 3 MGy. Furthermore, new insights are given on the vulnerability of more advanced technologies including planar Fully Depleted SOI and multiple-gate SOI transistors at such high dose. Potential of tested technologies are compared and discussed for stand-alone integrated circuits.
https://hal-ujm.archives-ouvertes.fr/ujm-00854044
Contributor : Sylvain Girard
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Submitted on : Monday, August 26, 2013 - 10:55:00 AM
Last modification on : Monday, February 25, 2019 - 4:34:18 PM
M. Gaillardin, Sylvain Girard, Philippe Paillet, Jean-Luc Leray, V. Goiffon, et al.. Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2590 - 2597. ⟨10.1109/TNS.2013.2249095⟩. ⟨ujm-00854044⟩
