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Université Jean Monnet – Saint-Etienne |  |
Journal articles
Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments
M. Gaillardin
1
Sylvain Girard
2
Philippe Paillet
1
Jean-Luc Leray
1
V. Goiffon
3
P. Magnan
3
Claude Marcandella
1
M. Martinez
1
Melanie Raine
1
O. Duhamel
1
N. Richard
1
F. Andrieu
4
S. Barraud
4
O. Faynot
4
M. Gaillardin 1
Author
Sylvain Girard 2
Author IdHAL : sylvain-girard-ujm
Philippe Paillet 1
Author
Jean-Luc Leray 1
Author
S. Barraud 4
Author
O. Faynot 4
Author
1
DAM/DIF - DAM Île-de-France (CEA Bruyères-le-Châtel 91297 Arpajon cedex - France)
- DAM - Direction des Applications Militaires : DAM/DIF (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DAM (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
2
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
3
ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace (ISAE - 10 av. Edouard Belin - BP 54032 - 31055 TOULOUSE Cedex 4 - France)
4
CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9 - France)
- DRT (CEA) - Direction de Recherche Technologique (CEA) : DRT (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRT (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
Abstract : This paper investigates the TID sensitivity of silicon-based technologies at several MGy irradiation doses to evaluate their potential for high TID-hardened circuits. Such circuits will be used in several specific applications suc as safety systems of current or future nuclear power plants considering various radiation environments including normal and accidental operating conditions, high energy physics instruments, fusion experiments or deep space missions. Various device designs implemented in well established bulk silicon and Partially Depleted SOI technologies are studied here up to 3 MGy. Furthermore, new insights are given on the vulnerability of more advanced technologies including planar Fully Depleted SOI and multiple-gate SOI transistors at such high dose. Potential of tested technologies are compared and discussed for stand-alone integrated circuits.
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-00854044
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Monday, August 26, 2013 - 10:55:00 AM
Last modification on : Thursday, June 11, 2020 - 5:04:05 PM
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Monday, August 26, 2013 - 10:55:00 AM
Last modification on : Thursday, June 11, 2020 - 5:04:05 PM
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- HAL Id : ujm-00854044, version 1
- DOI : 10.1109/TNS.2013.2249095
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Citation
M. Gaillardin, Sylvain Girard, Philippe Paillet, Jean-Luc Leray, V. Goiffon, et al.. Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2590 - 2597. ⟨10.1109/TNS.2013.2249095⟩. ⟨ujm-00854044⟩
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