Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

Thibault J-Y Derrien 1, 2 Tatiana Itina 1 R. Torres 2 Thierry Sarnet 2 Marc Sentis 2
1 LHC - Laboratoire Hubert Curien [Saint Etienne]
2 LP3 - Laboratoire Lasers, Plasmas et Procédés photoniques
Abstract : The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.
keyword : ipple formation silicon femtosecond laser model
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-00866904
Contributor : Tatiana Itina <>
Submitted on : Friday, September 27, 2013 - 12:32:27 PM
Last modification on : Wednesday, July 25, 2018 - 2:05:31 PM

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Thibault J-Y Derrien, Tatiana Itina, R. Torres, Thierry Sarnet, Marc Sentis. Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon. Journal of Applied Physics, American Institute of Physics, 2013, 114, pp.083104. ⟨10.1063/1.4818433⟩. ⟨ujm-00866904⟩

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