Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

Thibault J-Y Derrien; Tatiana Itina; R. Torres; Thierry Sarnet; Marc Sentis

Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

Thibault J-Y Derrien ^{1, 2} Tatiana Itina ¹ R. Torres ² Thierry Sarnet ² Marc Sentis ²

1 LHC - Laboratoire Hubert Curien [Saint Etienne]

2 LP3 - Laboratoire Lasers, Plasmas et Procédés photoniques

Abstract : The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.

keyword : ipple formation silicon femtosecond laser model

Document type :

Journal articles

Domain :

Engineering Sciences [physics] / Chemical and Process Engineering

Complete list of metadatas

https://hal-ujm.archives-ouvertes.fr/ujm-00866904
Contributor : Tatiana Itina <>
Submitted on : Friday, September 27, 2013 - 12:32:27 PM
Last modification on : Wednesday, July 25, 2018 - 2:05:31 PM

Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

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Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

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