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Journal Articles Journal of Applied Physics Year : 2013

Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

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Abstract

The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.

Dates and versions

ujm-00866904 , version 1 (27-09-2013)

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Thibault J-y Derrien, Tatiana Itina, R. Torres, Thierry Sarnet, Marc Sentis. Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon. Journal of Applied Physics, 2013, 114, pp.083104. ⟨10.1063/1.4818433⟩. ⟨ujm-00866904⟩
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