Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography

Abstract : The interaction between an ultrashort laser pulse and a sub-wavelength silicon tip under a high static electric field is investigated numerically and experimentally. Using an original autocorrelation setup of the laser-assisted atom probe tomography, the temporal evolution of the lattice temperature at the tip apex is experimentally monitored. An ultrafast cooling process, related to a confinement of the heating at the surface, is reported. This confinement is well predicted by a new model taking into account the free charges generation by photon absorption, their drift-diffusion motion under the electric field and their energy relaxation to the lattice.
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Annalen der Physik: Ultrafast Phenomena on the Nanoscale, 2012, 525 (1-2), pp.L1-L5. 〈10.1002/andp.201200182〉
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https://hal-ujm.archives-ouvertes.fr/ujm-00866966
Contributeur : Tatiana Itina <>
Soumis le : vendredi 27 septembre 2013 - 13:57:12
Dernière modification le : mercredi 25 juillet 2018 - 14:05:31

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Angela Vella, E. Silaeva, Jonathan Houard, Tatiana Itina, B. Deconihout. Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography. Annalen der Physik: Ultrafast Phenomena on the Nanoscale, 2012, 525 (1-2), pp.L1-L5. 〈10.1002/andp.201200182〉. 〈ujm-00866966〉

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