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Université Jean Monnet – Saint-Etienne |  |
Journal articles
Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography
Abstract : The interaction between an ultrashort laser pulse and a sub-wavelength silicon tip under a high static electric field is investigated numerically and experimentally. Using an original autocorrelation setup of the laser-assisted atom probe tomography, the temporal evolution of the lattice temperature at the tip apex is experimentally monitored. An ultrafast cooling process, related to a confinement of the heating at the surface, is reported. This confinement is well predicted by a new model taking into account the free charges generation by photon absorption, their drift-diffusion motion under the electric field and their energy relaxation to the lattice.
https://hal-ujm.archives-ouvertes.fr/ujm-00866966
Contributor : Tatiana Itina <>
Submitted on : Friday, September 27, 2013 - 1:57:12 PM
Last modification on : Thursday, January 16, 2020 - 4:14:13 PM
Contributor : Tatiana Itina <>
Submitted on : Friday, September 27, 2013 - 1:57:12 PM
Last modification on : Thursday, January 16, 2020 - 4:14:13 PM
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