Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography

Angela Vella; E. Silaeva; Jonathan Houard; Tatiana Itina; B. Deconihout

Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography

Angela Vella ¹ E. Silaeva ² Jonathan Houard ¹ Tatiana Itina ² B. Deconihout ¹

1 GPM - Groupe de physique des matériaux

2 LHC - Laboratoire Hubert Curien [Saint Etienne]

Abstract : The interaction between an ultrashort laser pulse and a sub-wavelength silicon tip under a high static electric field is investigated numerically and experimentally. Using an original autocorrelation setup of the laser-assisted atom probe tomography, the temporal evolution of the lattice temperature at the tip apex is experimentally monitored. An ultrafast cooling process, related to a confinement of the heating at the surface, is reported. This confinement is well predicted by a new model taking into account the free charges generation by photon absorption, their drift-diffusion motion under the electric field and their energy relaxation to the lattice.

keyword : Laser atom probe femtosecond ultrafast nanoscale model

Document type :

Journal articles

Domain :

Engineering Sciences [physics] / Chemical and Process Engineering

Complete list of metadatas

https://hal-ujm.archives-ouvertes.fr/ujm-00866966
Contributor : Tatiana Itina <>
Submitted on : Friday, September 27, 2013 - 1:57:12 PM
Last modification on : Thursday, May 16, 2019 - 3:58:14 PM

Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography

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Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography

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