Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography

Abstract : The interaction between an ultrashort laser pulse and a sub-wavelength silicon tip under a high static electric field is investigated numerically and experimentally. Using an original autocorrelation setup of the laser-assisted atom probe tomography, the temporal evolution of the lattice temperature at the tip apex is experimentally monitored. An ultrafast cooling process, related to a confinement of the heating at the surface, is reported. This confinement is well predicted by a new model taking into account the free charges generation by photon absorption, their drift-diffusion motion under the electric field and their energy relaxation to the lattice.
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Submitted on : Friday, September 27, 2013 - 1:57:12 PM
Last modification on : Thursday, May 16, 2019 - 3:58:14 PM

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Angela Vella, E. Silaeva, Jonathan Houard, Tatiana Itina, B. Deconihout. Probing the thermal response of a silicon field emitted by ultrafast Laser Assistet Atom Probe Tomography. Annalen der Physik: Ultrafast Phenomena on the Nanoscale, 2012, 525 (1-2), pp.L1-L5. ⟨10.1002/andp.201200182⟩. ⟨ujm-00866966⟩

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