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Analysis of surface structures induced by ultra-short laser pulses on the surface of a silicon target

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Abstract

Based on a detailed modeling, we present an analysis of surface structure formation on silicon surface by femtosecond laser pulses. We demonstrate the transient evolution of the density of the excited carriers and temperature evolution. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting ripple structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained results help to better control over the surface structures induced by femtosecond laser on a semiconductor material [1]. [1] R. Torres et al. ,Journal of Optoelectronics and Advanced Materials Vol. 12, No. 3, 2010, Pages 621 - 625

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Dates and versions

ujm-00867206 , version 1 (27-09-2013)

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  • HAL Id : ujm-00867206 , version 1

Cite

Tatiana Itina, Thibault J-y Derrien, Thierry Sarnet, Marc Sentis. Analysis of surface structures induced by ultra-short laser pulses on the surface of a silicon target. FLAMN-13, Jun 2013, Saint-Petersburg, Pushkin, Russia. ⟨ujm-00867206⟩
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