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Université Jean Monnet – Saint-Etienne |  |
Conference papers
Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation
M. Gaillardin
1
Melanie Raine
1
O. Duhamel
1
Sylvain Girard
2
Philippe Paillet
1
D. Mcmorrow
3
J. Warner
3
O. Faynot
4
S. Barraud
4
F. Andrieu
4
M. Gaillardin 1
Author
Melanie Raine 1
Author
O. Duhamel 1
Author
Sylvain Girard 2
Mail :
Author IdHAL : sylvain-girard-ujm
S. Barraud 4
Author
F. Andrieu 4
Author
1
DAM/DIF - DAM Île-de-France (CEA Bruyères-le-Châtel 91297 Arpajon cedex - France)
- DAM - Direction des Applications Militaires : DAM/DIF (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DAM (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
2
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
3
NRL - Naval Research Laboratory (4555 Overlook Ave., SW Washington, DC 20375 - United States)
4
CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9 - France)
- UGA - Université Grenoble Alpes (CS 40700 - 38058 Grenoble cedex - France)
- DRT (CEA) - Direction de Recherche Technologique (CEA) : DRT (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRT (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
Abstract : We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients on dedicated test structures processed either on standard relaxed or bi-axially tensile strained SOI substrates.
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Complete list of metadatas
https://hal-ujm.archives-ouvertes.fr/ujm-00871143
Contributor : Sylvain Girard <>
Submitted on : Tuesday, October 8, 2013 - 10:28:00 PM
Last modification on : Monday, April 6, 2020 - 9:22:30 AM
Contributor : Sylvain Girard <>
Submitted on : Tuesday, October 8, 2013 - 10:28:00 PM
Last modification on : Monday, April 6, 2020 - 9:22:30 AM
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- HAL Id : ujm-00871143, version 1
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Citation
M. Gaillardin, Melanie Raine, O. Duhamel, Sylvain Girard, Philippe Paillet, et al.. Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation. Conference Radiation and Its Effects on Components and Systems (RADECS 2013), Sep 2013, Oxford, United Kingdom. pp.XX. ⟨ujm-00871143⟩
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