Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

M. Gaillardin (1) , Melanie Raine (1) , O. Duhamel (1) , Sylvain Girard (2) , Philippe Paillet (1) , D. Mcmorrow (3) , J. Warner (3) , O. Faynot (4) , S. Barraud (4) , F. Andrieu (4)

1 DAM/DIF - DAM Île-de-France
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 NRL - Naval Research Laboratory
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients on dedicated test structures processed either on standard relaxed or bi-axially tensile strained SOI substrates.

Domains: Engineering Sciences [physics]; Electronics

M. Gaillardin, Melanie Raine, O. Duhamel, Sylvain Girard, Philippe Paillet, et al.. Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation. Conference Radiation and Its Effects on Components and Systems (RADECS 2013), Sep 2013, Oxford, United Kingdom. pp.XX. ⟨ujm-00871143⟩