Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation

Abstract : We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients on dedicated test structures processed either on standard relaxed or bi-axially tensile strained SOI substrates.
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Communication dans un congrès
Conference Radiation and Its Effects on Components and Systems (RADECS 2013), Sep 2013, Oxford, United Kingdom. pp.XX, 2013
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https://hal-ujm.archives-ouvertes.fr/ujm-00871143
Contributeur : Sylvain Girard <>
Soumis le : mardi 8 octobre 2013 - 22:28:00
Dernière modification le : jeudi 29 mars 2018 - 09:04:04

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  • HAL Id : ujm-00871143, version 1

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M. Gaillardin, Melanie Raine, O. Duhamel, Sylvain Girard, Philippe Paillet, et al.. Impact of mechanical strain on the charge collection mechanisms of nanometer scaled SOI devices under heavy ion and pulsed laser irradiation. Conference Radiation and Its Effects on Components and Systems (RADECS 2013), Sep 2013, Oxford, United Kingdom. pp.XX, 2013. 〈ujm-00871143〉

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