Rippled area formed by surface plasmon polaritons upon laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes

Thibault J-Y Derrien 1 Jörg Krüger 1 Tatiana Itina 2 Sandra Höhm 3 Arkadi Rosenfeld 3 Jörn Bonse 4
1 BAM Bundesanstalt für Materialforschung u. -prüfung
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 MBI - Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie
4 Bundesanstalt für Materialforschung und -prüfung
Abstract : The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and *4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delaydependent decrease of the low spatial frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination is quantified individually.
keyword : Ripples femtosecond laser model
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Article dans une revue
Applied physics. A, Materials science & processing, Springer Verlag, 2013, ONLINE, pp.1-5. 〈10.1007/s00339-013-8205-2〉
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https://hal-ujm.archives-ouvertes.fr/ujm-00957518
Contributeur : Tatiana Itina <>
Soumis le : lundi 10 mars 2014 - 15:32:43
Dernière modification le : jeudi 11 janvier 2018 - 06:20:35

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UNIV-ST-ETIENNE | LAHC

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Thibault J-Y Derrien, Jörg Krüger, Tatiana Itina, Sandra Höhm, Arkadi Rosenfeld, et al.. Rippled area formed by surface plasmon polaritons upon laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes. Applied physics. A, Materials science & processing, Springer Verlag, 2013, ONLINE, pp.1-5. 〈10.1007/s00339-013-8205-2〉. 〈ujm-00957518〉

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