Rippled area formed by surface plasmon polaritons upon laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes

Abstract : The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and *4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delaydependent decrease of the low spatial frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination is quantified individually.
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Submitted on : Monday, March 10, 2014 - 3:32:43 PM
Last modification on : Tuesday, February 12, 2019 - 4:54:02 PM

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Thibault J-Y Derrien, Jörg Krüger, Tatiana Itina, Sandra Höhm, Arkadi Rosenfeld, et al.. Rippled area formed by surface plasmon polaritons upon laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes. Applied physics. A, Materials science & processing, Springer Verlag, 2013, ONLINE, pp.1-5. ⟨10.1007/s00339-013-8205-2⟩. ⟨ujm-00957518⟩

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