Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements

Abstract : The origin of total ionizing dose induced dark current in CMOS image sensors is investigated by comparing dark current measurements to interface state density and trapped charge density measurements. Two types of photodiode and several thick-oxide-FETs were manufactured using a 0.18-μm CMOS image sensor process and exposed to 10-keV X-ray from 3 krad to 1 Mrad. It is shown that the radiation induced trapped charge extends the space charge region at the oxide interface, leading to an enhancement of interface state SRH generation current. Isochronal annealing tests show that STI interface states anneal out at temperature lower than 100°C whereas about a third of the trapped charge remains after 30 min at 300°C.
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IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2010, 57 (6), pp.3087 - 3094. 〈10.1109/TNS.2010.2077653〉
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https://hal-ujm.archives-ouvertes.fr/ujm-01011648
Contributeur : Sylvain Girard <>
Soumis le : mardi 24 juin 2014 - 11:40:24
Dernière modification le : jeudi 29 mars 2018 - 09:04:04

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Vincent Goiffon, Cédric Virmontois, Pierre Magnan, Sylvain Girard, Philippe Paillet. Analysis of Total Dose-Induced Dark Current in CMOS Image Sensors From Interface State and Trapped Charge Density Measurements. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2010, 57 (6), pp.3087 - 3094. 〈10.1109/TNS.2010.2077653〉. 〈ujm-01011648〉

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