Displacement Damage Effect Due to Neutron and Proton Irradiations on CMOS Image Sensor Manufactured in Deep Sub-Micron Technology

Abstract : Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 calculations. We also discuss, through annealing analysis, which defects could be responsible for the dark current in CMOS image sensors.
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IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2010, 57 (6), pp.3101 - 3108. 〈10.1109/TNS.2010.2085448〉
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https://hal-ujm.archives-ouvertes.fr/ujm-01011656
Contributeur : Sylvain Girard <>
Soumis le : mardi 24 juin 2014 - 11:46:53
Dernière modification le : jeudi 29 mars 2018 - 09:04:04

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Cédric Virmontois, Vincent Goiffon, Pierre Magnan, Sylvain Girard, Christophe Inguimbert, et al.. Displacement Damage Effect Due to Neutron and Proton Irradiations on CMOS Image Sensor Manufactured in Deep Sub-Micron Technology. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2010, 57 (6), pp.3101 - 3108. 〈10.1109/TNS.2010.2085448〉. 〈ujm-01011656〉

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