Displacement Damage Effect Due to Neutron and Proton Irradiations on CMOS Image Sensor Manufactured in Deep Sub-Micron Technology

Cédric Virmontois (1) , Vincent Goiffon (1) , Pierre Magnan (1) , Sylvain Girard (2) , Christophe Inguimbert (3) , S. Petit (4) , Guy Rolland (4) , O. Saint-Pé (5)

1 DEOS - Département Electronique, Optronique et Signal
2 DAM/DIF - DAM Île-de-France
3 ONERA - The French Aerospace Lab [Toulouse]
4 CNES - Centre National d'Études Spatiales [Toulouse]
5 Astrium [Toulouse]

Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the dark current nonuniformity are investigated. Dark current histogram observations are compared to damage energy distributions based on GEANT 4 calculations. We also discuss, through annealing analysis, which defects could be responsible for the dark current in CMOS image sensors.

Domains: Engineering Sciences [physics]

Cédric Virmontois, Vincent Goiffon, Pierre Magnan, Sylvain Girard, Christophe Inguimbert, et al.. Displacement Damage Effect Due to Neutron and Proton Irradiations on CMOS Image Sensor Manufactured in Deep Sub-Micron Technology. IEEE Transactions on Nuclear Science, 2010, 57 (6), pp.3101 - 3108. ⟨10.1109/TNS.2010.2085448⟩. ⟨ujm-01011656⟩