Enhanced Radiation Induced Narrow Channel Effects in a Commercial 0.18 µm Bulk Technology

Abstract : otal ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P-type metal-oxide semiconductor (PMOS) transistors, leading to a significant threshold voltage shift which may compromise circuit operations. Calculations using a code dedicated to radiation-induced charge trapping in oxides show that the radiation-induced positive charge trapping in trench oxides leads to the modifications of the electrical characteristics experimentally evidenced. Radiation hardening issues are finally discussed as a function of the device geometry and design.
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.2807 - 2815. 〈10.1109/TNS.2011.2170854〉
Liste complète des métadonnées

https://hal-ujm.archives-ouvertes.fr/ujm-01011678
Contributeur : Sylvain Girard <>
Soumis le : mardi 24 juin 2014 - 12:11:03
Dernière modification le : jeudi 26 juillet 2018 - 12:08:51

Identifiants

Collections

Citation

M. Gaillardin, Vincent Goiffon, Sylvain Girard, M. Martinez, Pierre Magnan, et al.. Enhanced Radiation Induced Narrow Channel Effects in a Commercial 0.18 µm Bulk Technology. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.2807 - 2815. 〈10.1109/TNS.2011.2170854〉. 〈ujm-01011678〉

Partager

Métriques

Consultations de la notice

65