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Article Dans Une Revue IEEE Transactions on Nuclear Science Année : 2011

Enhanced Radiation Induced Narrow Channel Effects in a Commercial 0.18 µm Bulk Technology

Résumé

otal ionizing dose effects are investigated in input/output transistors that are fabricated by using a commercial 0.18 μm bulk process. An enhanced radiation-induced narrow channel effect is demonstrated in N-type metal-oxide semiconductor (NMOS) and P-type metal-oxide semiconductor (PMOS) transistors, leading to a significant threshold voltage shift which may compromise circuit operations. Calculations using a code dedicated to radiation-induced charge trapping in oxides show that the radiation-induced positive charge trapping in trench oxides leads to the modifications of the electrical characteristics experimentally evidenced. Radiation hardening issues are finally discussed as a function of the device geometry and design.
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Dates et versions

ujm-01011678 , version 1 (24-06-2014)

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M. Gaillardin, Vincent Goiffon, Sylvain Girard, M. Martinez, Pierre Magnan, et al.. Enhanced Radiation Induced Narrow Channel Effects in a Commercial 0.18 µm Bulk Technology. IEEE Transactions on Nuclear Science, 2011, 58 (6), pp.2807 - 2815. ⟨10.1109/TNS.2011.2170854⟩. ⟨ujm-01011678⟩
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