Total Ionizing Dose versus Displacement Damage Dose Induced Dark Current Random Telegraph Signal in CMOS Image Sensors

Cédric Virmontois 1 Vincent Goiffon 1 P. Magnan 1 O. Saint-Pé 2 Sylvain Girard 3 S. Petit 4 Guy Rolland 4 A. Bardoux 4
1 ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace
2 Astrium [Toulouse]
3 DAM/DIF - DAM Île-de-France
4 CNES - Centre National d'Etudes Spatiales
Abstract : Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena.
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Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.3085 - 3094. 〈10.1109/TNS.2011.2171005〉
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https://hal-ujm.archives-ouvertes.fr/ujm-01011679
Contributeur : Sylvain Girard <>
Soumis le : mardi 24 juin 2014 - 12:15:29
Dernière modification le : lundi 15 octobre 2018 - 15:54:03

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CEA | UNIV-ST-ETIENNE | DAM

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Cédric Virmontois, Vincent Goiffon, P. Magnan, O. Saint-Pé, Sylvain Girard, et al.. Total Ionizing Dose versus Displacement Damage Dose Induced Dark Current Random Telegraph Signal in CMOS Image Sensors. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.3085 - 3094. 〈10.1109/TNS.2011.2171005〉. 〈ujm-01011679〉

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