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Journal Articles IEEE Transactions on Nuclear Science Year : 2011

Total Ionizing Dose versus Displacement Damage Dose Induced Dark Current Random Telegraph Signal in CMOS Image Sensors

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Abstract

Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena.
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Dates and versions

ujm-01011679 , version 1 (24-06-2014)

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Cédric Virmontois, Vincent Goiffon, P. Magnan, O. Saint-Pé, Sylvain Girard, et al.. Total Ionizing Dose versus Displacement Damage Dose Induced Dark Current Random Telegraph Signal in CMOS Image Sensors. IEEE Transactions on Nuclear Science, 2011, 58 (6), pp.3085 - 3094. ⟨10.1109/TNS.2011.2171005⟩. ⟨ujm-01011679⟩
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