Total Ionizing Dose versus Displacement Damage Dose Induced Dark Current Random Telegraph Signal in CMOS Image Sensors

Cédric Virmontois 1 Vincent Goiffon 1 P. Magnan 1 O. Saint-Pé 2 Sylvain Girard 3 S. Petit 4 Guy Rolland 4 A. Bardoux 4
1 ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace
2 Astrium [Toulouse]
3 DAM/DIF - DAM Île-de-France
4 CNES - Centre National d'Études Spatiales [Toulouse]
Abstract : Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors. Discrepancies between both RTS are emphasised to better understand the microscopic origins of the phenomena.
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-01011679
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Submitted on : Tuesday, June 24, 2014 - 12:15:29 PM
Last modification on : Thursday, July 25, 2019 - 4:34:16 PM

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CEA | UNIV-ST-ETIENNE | DAM

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Cédric Virmontois, Vincent Goiffon, P. Magnan, O. Saint-Pé, Sylvain Girard, et al.. Total Ionizing Dose versus Displacement Damage Dose Induced Dark Current Random Telegraph Signal in CMOS Image Sensors. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2011, 58 (6), pp.3085 - 3094. ⟨10.1109/TNS.2011.2171005⟩. ⟨ujm-01011679⟩

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