Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors

Cédric Virmontois 1 V. Goiffon 1 P. Magnan 1 Sylvain Girard 2 O. Saint-Pé 3 S. Petit 4 G. Rolland 4 A. Bardoux 4
1 ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace
2 DAM/DIF - DAM Île-de-France
3 Astrium [Toulouse]
4 CNES - Centre National d'Etudes Spatiales
Abstract : Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared. It appears that for a given displacement damage dose, the hot pixel tail distributions are very similar, if normalized properly. This behavior is observed on all the tested CIS designs (4 designs, 2 technologies) and all the tested particles (protons from 50 MeV to 500 MeV and neutrons from 14 MeV to 22 MeV). Thanks to this result, all the dark current distribution presented in this paper can be fitted by a simple model with a unique set of two factors (not varying from one experimental condition to another). The proposed normalization method of the dark current histogram can be used to compare any dark current distribution to the distributions observed in this work. This paper suggests that this model could be applied to other devices and/or irradiation conditions.
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4), pp.927 - 936. 〈10.1109/TNS.2012.2203317〉
Liste complète des métadonnées
https://hal-ujm.archives-ouvertes.fr/ujm-01011683
Contributeur : Sylvain Girard <>
Soumis le : mardi 24 juin 2014 - 12:24:51
Dernière modification le : lundi 15 octobre 2018 - 15:54:03

Identifiants

Collections

CEA | UNIV-ST-ETIENNE | DAM

Citation

Cédric Virmontois, V. Goiffon, P. Magnan, Sylvain Girard, O. Saint-Pé, et al.. Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2012, 59 (4), pp.927 - 936. 〈10.1109/TNS.2012.2203317〉. 〈ujm-01011683〉

Exporter

BibTeX TEI DC DCterms EndNote

Partager

Métriques

Consultations de la notice

125

Contact

support.ccsd.cnrs.fr
hal.support@ccsd.cnrs.fr
Logo CCSD