Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon

Melanie Raine (1) , V. Goiffon (2) , P. Paillet (1) , O. Duhamel (1) , Sylvain Girard (3) , M. Gaillardin (1) , Cédric Virmontois (4) , J.-M. Belloir (1, 2, 4) , Nicolas Richard (1) , P. Magnan (2)

1 DAM/DIF - DAM Île-de-France
2 ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace
3 LHC - Laboratoire Hubert Curien
4 CNES - Centre National d'Études Spatiales [Toulouse]

An experimental method using a CMOS image sensor as test device is proposed to study the kinetics of formation and annealing of Single Particle Displacement Damage (SPDD) events in arrays of silicon microvolumes. The dark current level is monitored in real time under neutron irradiation, allowing to detect SPDD events and follow their subsequent annealing behavior. Both short term and long term annealing results are presented, with recordings from 75 ms to 4.5 days after SPDD events, performed with different integration times. A majority of pixels exhibits a continuous logarithmic relaxation; a selection of particular cases is finally presented, corresponding to pixels exhibiting Random Telegraph Signals.

Domains: Engineering Sciences [physics]

Melanie Raine, V. Goiffon, P. Paillet, O. Duhamel, Sylvain Girard, et al.. Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon. 2014 IEEE Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France. pp.A2. ⟨ujm-01027764⟩