Abstract : An experimental method using a CMOS image sensor as test device is proposed to study the kinetics of formation and annealing of Single Particle Displacement Damage (SPDD) events in arrays of silicon microvolumes. The dark current level is monitored in real time under neutron irradiation, allowing to detect SPDD events and follow their subsequent annealing behavior. Both short term and long term annealing results are presented, with recordings from 75 ms to 4.5 days after SPDD events, performed with different integration times. A majority of pixels exhibits a continuous logarithmic relaxation; a selection of particular cases is finally presented, corresponding to pixels exhibiting Random Telegraph Signals.
Type de document :
Communication dans un congrès
2014 IEEE Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France. pp.A2, 2014
https://hal-ujm.archives-ouvertes.fr/ujm-01027764
Contributeur : Sylvain Girard
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Soumis le : mardi 22 juillet 2014 - 12:08:30
Dernière modification le : lundi 15 octobre 2018 - 15:54:03
Melanie Raine, V. Goiffon, P. Paillet, O. Duhamel, Sylvain Girard, et al.. Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon. 2014 IEEE Nuclear and Space Radiation Effects Conference, Jul 2014, Paris, France. pp.A2, 2014. 〈ujm-01027764〉
