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Université Jean Monnet – Saint-Etienne |  |
Journal articles
Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation
Abstract : We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Laser SET measurements show that the active silicon layer thickness is the most important contributor to the SET response of highly scaled Ultra-Thin SOI (UTSOI) devices compared to the impact of strain. This is then demonstrated by dedicated TCAD calculations performed without taking into account any strain engineering technique. Finally, heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients to get additional insights into the impact of short channel effects on the SET response of nanometer scaled SOI devices
https://hal-ujm.archives-ouvertes.fr/ujm-01056408
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Tuesday, August 19, 2014 - 9:05:53 AM
Last modification on : Thursday, June 11, 2020 - 5:04:06 PM
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Tuesday, August 19, 2014 - 9:05:53 AM
Last modification on : Thursday, June 11, 2020 - 5:04:06 PM