Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation

M. Gaillardin 1 Melanie Raine 1 O. Duhamel 1 Sylvain Girard 2 Philippe Paillet 1 D. Mcmorrow 3 J. Warner 3 F. Andrieu 4 S. Barraud 4 Nicolas Roche 3
1 DAM/DIF - DAM Île-de-France
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 NRL - Naval Research Laboratory
4 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
Abstract : We investigate the impact of performance boosters using mechanical stress on the Single-Event Transient (SET) response of nanometer scaled Fully-Depleted Silicon-On-Insulator (SOI) devices. Laser SET measurements show that the active silicon layer thickness is the most important contributor to the SET response of highly scaled Ultra-Thin SOI (UTSOI) devices compared to the impact of strain. This is then demonstrated by dedicated TCAD calculations performed without taking into account any strain engineering technique. Finally, heavy ion-induced charge collection mechanisms are analyzed through the measurement of fast transients to get additional insights into the impact of short channel effects on the SET response of nanometer scaled SOI devices
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Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1628 - 1634. 〈10.1109/TNS.2014.2314143〉
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https://hal-ujm.archives-ouvertes.fr/ujm-01056408
Contributeur : Sylvain Girard <>
Soumis le : mardi 19 août 2014 - 09:05:53
Dernière modification le : jeudi 29 mars 2018 - 09:04:04

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UNIV-ST-ETIENNE | CEA | LAHC | DRT | LETI

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M. Gaillardin, Melanie Raine, O. Duhamel, Sylvain Girard, Philippe Paillet, et al.. Strain and Silicon Film Thickness on Charge Collection Mechanisms of Nanometer Scaled SOI Devices Under Heavy Ion and Pulsed Laser Irradiation. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (4), pp.1628 - 1634. 〈10.1109/TNS.2014.2314143〉. 〈ujm-01056408〉

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