Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes

T.J.Y. Derrien 1 J. Kruger 1 Tatiana Itina 2 Sandra Höhm 3 A. Rosenfeld 3 Jörn Bonse 1
1 BAM Bundesanstalt für Materialforschung u. -prüfung
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 MBI - Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie
Abstract : The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between 0 and ∼4 ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delay-dependent decrease of the low spatial frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination is quantified individually.
Keywords : femtosecond laser periodic strictures ripples
Type de document :
Article dans une revue
Applied Physics A Solids and Surface, Springer-Verlag, 2014, 117 (1), pp.77-81. 〈http://link.springer.com/article/10.1007%2Fs00339-013-8205-2〉
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https://hal-ujm.archives-ouvertes.fr/ujm-01077421
Contributeur : Tatiana Itina <>
Soumis le : vendredi 24 octobre 2014 - 16:20:51
Dernière modification le : jeudi 11 janvier 2018 - 06:20:35

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T.J.Y. Derrien, J. Kruger, Tatiana Itina, Sandra Höhm, A. Rosenfeld, et al.. Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes. Applied Physics A Solids and Surface, Springer-Verlag, 2014, 117 (1), pp.77-81. 〈http://link.springer.com/article/10.1007%2Fs00339-013-8205-2〉. 〈ujm-01077421〉

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