Probing the thermal response of a silicon field emitter by ultra-fast Laser Assisted Atom Probe Tomography

Abstract : The interaction between an ultrashort laser pulse and a sub-wavelength silicon tip under a high static electric field is investigated numerically and experimentally. Using an original autocorrelation setup of the laser-assisted atom probe tomography, the temporal evolution of the lattice temperature at the tip apex is experimentally monitored. An ultrafast cooling process, related to a confinement of the heating at the surface, is reported. This confinement is well predicted by a new model taking into account the free charges generation by photon absorption, their drift-diffusion motion under the electric field and their energy relaxation to the lattice.
Type de document :
Article dans une revue
Annalen der Physik, 2013, 525 (1-2), pp.L1-L5. 〈10.1002/andp.201200182〉
Liste complète des métadonnées

https://hal-ujm.archives-ouvertes.fr/ujm-01077454
Contributeur : Tatiana Itina <>
Soumis le : vendredi 24 octobre 2014 - 16:58:53
Dernière modification le : mercredi 25 juillet 2018 - 14:05:31

Lien texte intégral

Identifiants

Citation

Angela Vella, Elena Silaeva, J. Houard, Tatiana Itina, B. Deconihout. Probing the thermal response of a silicon field emitter by ultra-fast Laser Assisted Atom Probe Tomography. Annalen der Physik, 2013, 525 (1-2), pp.L1-L5. 〈10.1002/andp.201200182〉. 〈ujm-01077454〉

Partager

Métriques

Consultations de la notice

68