Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies

Abstract : This work investigates MGy Total Ionizing Dose effects in CMOS technologies. Large TID-induced electrical shifts are observed in devices with thin dielectrics. Trapping and detrapping properties are discussed using dedicated irradiation/annealing experiments
Type de document :
Poster
Nuclear and Space Radiation Effects Conference (NSREC 2015), Jul 2015, Boston, United States
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https://hal-ujm.archives-ouvertes.fr/ujm-01185833
Contributeur : Sylvain Girard <>
Soumis le : vendredi 21 août 2015 - 16:07:30
Dernière modification le : mercredi 31 janvier 2018 - 14:00:02

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  • HAL Id : ujm-01185833, version 1

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M. Gaillardin, Philippe Paillet, Vincent Goiffon, Martial Martinez, Sylvain Girard, et al.. Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies. Nuclear and Space Radiation Effects Conference (NSREC 2015), Jul 2015, Boston, United States. 〈ujm-01185833〉

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