Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies

Abstract : This work investigates MGy Total Ionizing Dose effects in CMOS technologies. Large TID-induced electrical shifts are observed in devices with thin dielectrics. Trapping and detrapping properties are discussed using dedicated irradiation/annealing experiments
Document type :
Poster communications
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https://hal-ujm.archives-ouvertes.fr/ujm-01185833
Contributor : Sylvain Girard <>
Submitted on : Friday, August 21, 2015 - 4:07:30 PM
Last modification on : Monday, October 15, 2018 - 3:54:03 PM

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  • HAL Id : ujm-01185833, version 1

Citation

M. Gaillardin, Philippe Paillet, Vincent Goiffon, Martial Martinez, Sylvain Girard, et al.. Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies. Nuclear and Space Radiation Effects Conference (NSREC 2015), Jul 2015, Boston, United States. ⟨ujm-01185833⟩

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