Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies

M. Gaillardin (1) , Philippe Paillet (1) , Vincent Goiffon (2) , Martial Martinez (1) , Sylvain Girard (3) , Melanie Raine (1) , Claude Marcandella (1) , Duhamel Olivier (1) , Pierre Magnan (2)

1 DAM/DIF - DAM Île-de-France
2 ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace
3 LHC - Laboratoire Hubert Curien

This work investigates MGy Total Ionizing Dose effects in CMOS technologies. Large TID-induced electrical shifts are observed in devices with thin dielectrics. Trapping and detrapping properties are discussed using dedicated irradiation/annealing experiments

Domaines: Sciences de l'ingénieur [physics]

M. Gaillardin, Philippe Paillet, Vincent Goiffon, Martial Martinez, Sylvain Girard, et al.. Investigations on MGy Total Ionizing Dose Effects in CMOS Technologies. Nuclear and Space Radiation Effects Conference (NSREC 2015), Jul 2015, Boston, United States. ⟨ujm-01185833⟩