Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and Total Ionizing Dose Tests

Abstract : The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to several MGy(SiO2) (>100 Mrad) of TID. The perspectives in terms of further improvements and applications are discussed
Type de document :
Communication dans un congrès
Nuclear and Space Radiation Effects Conference (NSREC 2015), Jul 2015, Boston, United States
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https://hal-ujm.archives-ouvertes.fr/ujm-01185888
Contributeur : Sylvain Girard <>
Soumis le : vendredi 21 août 2015 - 21:59:31
Dernière modification le : jeudi 29 mars 2018 - 09:04:04

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  • HAL Id : ujm-01185888, version 1

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Vincent Goiffon, Franck Corbière, S. Rolando, Magali Estribeau, Pierre Magnan, et al.. Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and Total Ionizing Dose Tests. Nuclear and Space Radiation Effects Conference (NSREC 2015), Jul 2015, Boston, United States. 〈ujm-01185888〉

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