Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and Total Ionizing Dose Tests

Abstract : The radiation hardness of a radiation-hardened-by-design CMOS Image Sensor is validated up to several MGy(SiO2) (>100 Mrad) of TID. The perspectives in terms of further improvements and applications are discussed
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https://hal-ujm.archives-ouvertes.fr/ujm-01185888
Contributor : Sylvain Girard <>
Submitted on : Friday, August 21, 2015 - 9:59:31 PM
Last modification on : Monday, October 15, 2018 - 3:54:03 PM

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  • HAL Id : ujm-01185888, version 1

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Vincent Goiffon, Franck Corbière, S. Rolando, Magali Estribeau, Pierre Magnan, et al.. Multi-MGy Radiation Hardened CMOS Image Sensor: Design, Characterization and Total Ionizing Dose Tests. Nuclear and Space Radiation Effects Conference (NSREC 2015), IEEE, Jul 2015, Boston, United States. ⟨ujm-01185888⟩

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