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Journal articles
Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon
Melanie Raine
1
Vincent Goiffon
2
Philippe Paillet
1
Duhamel Olivier
1
Sylvain Girard
3
M. Gaillardin
1
Cédric Virmontois
4
Jean-Marc Belloir
1, 2, 4
Nicolas Richard
1
Pierre Magnan
2
Melanie Raine 1
Author
Vincent Goiffon 2
Author
Philippe Paillet 1
Mail :
Author
Duhamel Olivier 1
Author
Sylvain Girard 3
Mail :
Author IdHAL : sylvain-girard-ujm
M. Gaillardin 1
Mail :
Author
Cédric Virmontois 4
Author
Jean-Marc Belloir 1, 2, 4
Author
Nicolas Richard 1
Author
Pierre Magnan 2
Author
1
DAM/DIF - DAM Île-de-France (CEA Bruyères-le-Châtel 91297 Arpajon cedex - France)
- DAM - Direction des Applications Militaires : DAM/DIF (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DAM (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
2
ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace (ISAE - 10 av. Edouard Belin - BP 54032 - 31055 TOULOUSE Cedex 4 - France)
3
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
4
CNES - Centre National d'Études Spatiales [Toulouse] (18 avenue Edouard Belin 31401 Toulouse - France)
Abstract : An experimental method using a CMOS image sensor as test device is used to study the kinetics of formation and annealing of Single Particle Displacement Damage (SPDD) events in arrays of silicon microvolumes. The dark current level is monitored in real time under neutron irradiation, allowing to detect SPDD events and follow their subsequent annealing behavior. Both short term and long term annealing results are presented, with recordings from 75 ms to 4.5 days after SPDD events, performed with different integration times. A majority of pixels exhibits a continuous logarithmic relaxation; a selection of particular cases is finally presented, corresponding to pixels exhibiting Random Telegraph Signals.
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Journal articles
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Complete list of metadatas
https://hal-ujm.archives-ouvertes.fr/ujm-01185928
Contributor : Sylvain Girard <>
Submitted on : Saturday, August 22, 2015 - 10:24:03 AM
Last modification on : Monday, January 13, 2020 - 5:46:05 PM
Contributor : Sylvain Girard <>
Submitted on : Saturday, August 22, 2015 - 10:24:03 AM
Last modification on : Monday, January 13, 2020 - 5:46:05 PM
Identifiers
- HAL Id : ujm-01185928, version 1
- DOI : 10.1109/TNS.2014.2364397
Citation
Melanie Raine, Vincent Goiffon, Philippe Paillet, Duhamel Olivier, Sylvain Girard, et al.. Exploring the Kinetics of Formation and Annealing of Single Particle Displacement Damage in Microvolumes of Silicon. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2014, 61 (6), pp.2826 - 2833. ⟨10.1109/TNS.2014.2364397⟩. ⟨ujm-01185928⟩
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