 |
Université Jean Monnet – Saint-Etienne |  |
Poster communications
Process Window Optimizer for pattern based defect prediction on 28nm Metal Layer
Abstract : At the 28nm technology node and below, hot spot prediction and process window control across production wafers have become increasingly critical. We establish proof of concept for ASML's holistic lithography hot spot detection and defect monitoring flow, process window optimizer (PWO), for a 28nm metal layer process. We demonstrate prediction and verification of defect occurenceon wafer that arise from focus variations exceeding process window margins of device hotspots. We also estimate the improvement potential if design aware scanner control was applied.
Cited literature [6 references]
https://hal-ujm.archives-ouvertes.fr/ujm-01272884
Contributor : Jean-Gabriel Simiz <>
Submitted on : Wednesday, February 17, 2016 - 2:09:00 PM
Last modification on : Monday, January 13, 2020 - 5:46:06 PM
Long-term archiving on: : Wednesday, May 18, 2016 - 1:13:51 PM
Contributor : Jean-Gabriel Simiz <>
Submitted on : Wednesday, February 17, 2016 - 2:09:00 PM
Last modification on : Monday, January 13, 2020 - 5:46:06 PM
Long-term archiving on: : Wednesday, May 18, 2016 - 1:13:51 PM