Process Window Optimizer for pattern based defect prediction on 28nm Metal Layer

P Fanton; R La Greca; V Jain; C Prentice; J-G Simiz; S Hunsche; B Le-Gratiet; L Depre

Process Window Optimizer for pattern based defect prediction on 28nm Metal Layer

P Fanton ¹ R La Greca ² V Jain ³ C Prentice ² J-G Simiz ^{4, 1} S Hunsche ³ B Le-Gratiet ¹ L Depre ²

1 ST-CROLLES - STMicroelectronics [Crolles]

2 ASML SARL

3 ASML US

4 LHC - Laboratoire Hubert Curien [Saint Etienne]

Abstract : At the 28nm technology node and below, hot spot prediction and process window control across production wafers have become increasingly critical. We establish proof of concept for ASML's holistic lithography hot spot detection and defect monitoring flow, process window optimizer (PWO), for a 28nm metal layer process. We demonstrate prediction and verification of defect occurenceon wafer that arise from focus variations exceeding process window margins of device hotspots. We also estimate the improvement potential if design aware scanner control was applied.

Document type :

Poster communications

Domain :

Engineering Sciences [physics] / Micro and nanotechnologies/Microelectronics

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https://hal-ujm.archives-ouvertes.fr/ujm-01272884
Contributor : Jean-Gabriel Simiz <>
Submitted on : Wednesday, February 17, 2016 - 2:09:00 PM
Last modification on : Thursday, July 26, 2018 - 1:10:20 AM
Long-term archiving on : Wednesday, May 18, 2016 - 1:13:51 PM

Process Window Optimizer for pattern based defect prediction on 28nm Metal Layer

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Process Window Optimizer for pattern based defect prediction on 28nm Metal Layer

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