Automatic inspection of a residual resist layer by means of self-organizing map
Abstract
Photolithography allows large-scale fabrication of nanocomponents in the semiconductor industry. This technique consists of manufacturing a desired pattern on a photoresist film transferred onto the substrate during the etching process. Therefore, the mask quality is essential for reliable etching. For example, the presence of a residual layer of resist might be considered as a mask defect and can lead to the failure of the etching process. We propose the use of a Kohonen self-organizing map for automatic detection of a residual layer from an ellipsometric signature. The feasibility of the suggested inspection by the use of a classification technique is discussed and simulations are carried out on a 750-nm period grating.
Origin : Publisher files allowed on an open archive
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