Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
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Sylvain Girard
- Function : Author
- PersonId : 4880
- IdHAL : sylvain-girard-ujm
Aziz Boukenter
- Function : Author
- PersonId : 17979
- IdHAL : boukente
- ORCID : 0000-0001-9850-5389
- IdRef : 033547637
Abstract
Through the comparison of several CMOS image sensor technologies (including partially pinned photodidiode), the influence of the manufacturing process on the radiation induced degradation is stated up to total ionizing doses of 1 MGy(SiO2).