Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels
Serena Rizzolo
(1)
,
Vincent Goiffon
(1)
,
Franck Corbière
(1)
,
R. Molina
(1)
,
Aziouz Chabane
(1)
,
Pierre Magnan
(1)
,
Sylvain Girard
(2)
,
Aziz Boukenter
(2)
,
Timothé Allanche
(2)
,
Philippe Paillet
(3)
,
Cyprien Muller
(3, 2)
,
Céline Monsanglant-Louvet
(4)
,
Mélanie Osmond
(4)
,
H. Desjonqueres
(4)
,
Jean-Reynald Macé
(5)
,
P. Burnichon
(6)
,
J-P Baudu
(6)
,
Stéphane Plumeri
(7)
Sylvain Girard
- Function : Author
- PersonId : 4880
- IdHAL : sylvain-girard-ujm
- ORCID : 0000-0002-9804-8971
- IdRef : 076444899
Aziz Boukenter
- Function : Author
- PersonId : 17979
- IdHAL : boukente
- ORCID : 0000-0001-9850-5389
- IdRef : 033547637
Céline Monsanglant-Louvet
- Function : Author
- PersonId : 1063615
- IdHAL : celine-monsanglant-louvet
- ORCID : 0000-0003-3518-7920
Abstract
Through the comparison of several CMOS image sensor technologies (including partially pinned photodidiode), the influence of the manufacturing process on the radiation induced degradation is stated up to total ionizing doses of 1 MGy(SiO2).