Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Abstract : Through the comparison of several CMOS image sensor technologies (including partially pinned photodidiode), the influence of the manufacturing process on the radiation induced degradation is stated up to total ionizing doses of 1 MGy(SiO2).
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Conference papers
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https://hal-ujm.archives-ouvertes.fr/ujm-01964663
Contributor : Sylvain Girard <>
Submitted on : Saturday, December 22, 2018 - 11:58:22 PM
Last modification on : Monday, December 24, 2018 - 1:10:08 AM

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  • HAL Id : ujm-01964663, version 1

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Serena Rizzolo, Vincent Goiffon, Franck Corbière, R. Molina, Aziouz Chabane, et al.. Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels. Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.B3. ⟨ujm-01964663⟩

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