HAL will be down for maintenance from Friday, June 10 at 4pm through Monday, June 13 at 9am. More information
Skip to Main content Skip to Navigation
Conference papers

Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Serena Rizzolo 1 Vincent Goiffon 1 Franck Corbière 1 R. Molina 1 Aziouz Chabane 1 Pierre Magnan 1 Sylvain Girard 2 Aziz Boukenter 2 Timothé Allanche 2 Philippe Paillet 3 Cyprien Muller 3, 2 Céline Monsanglant-Louvet 4 Mélanie Osmond 4 H. Desjonqueres 4 Jean-Reynald Macé 5 P. Burnichon 6 J-P Baudu 6 Stéphane Plumeri 7
1 ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 DAM/DIF - DAM Île-de-France
4 IRSN - Institut de Radioprotection et de Sûreté Nucléaire
5 Groupe AREVA
6 OPTSYS
7 ANDRA - Agence Nationale pour la Gestion des Déchets Radioactifs
Abstract : Through the comparison of several CMOS image sensor technologies (including partially pinned photodidiode), the influence of the manufacturing process on the radiation induced degradation is stated up to total ionizing doses of 1 MGy(SiO2).
Document type :
Conference papers
Complete list of metadata
https://hal-ujm.archives-ouvertes.fr/ujm-01964663
Contributor : Sylvain Girard Connect in order to contact the contributor
Submitted on : Saturday, December 22, 2018 - 11:58:22 PM
Last modification on : Monday, January 13, 2020 - 5:46:07 PM

Identifiers

  • HAL Id : ujm-01964663, version 1

Collections

UNIV-ST-ETIENNE | CNRS | IRSN | IOGS | CEA | DAM | PARISTECH | UNIV-PARIS-SACLAY | UDL

Citation

Serena Rizzolo, Vincent Goiffon, Franck Corbière, R. Molina, Aziouz Chabane, et al.. Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels. Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.B3. ⟨ujm-01964663⟩

Export

BibTeX TEI DC DCterms EndNote Datacite

Share

Metrics

Record views

41