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Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

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Aziz Boukenter
Philippe Paillet
  • Function : Author
  • PersonId : 951923
Jean-Reynald Macé
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P. Burnichon
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J-P Baudu
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Abstract

Through the comparison of several CMOS image sensor technologies (including partially pinned photodidiode), the influence of the manufacturing process on the radiation induced degradation is stated up to total ionizing doses of 1 MGy(SiO2).
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Dates and versions

ujm-01964663 , version 1 (22-12-2018)

Identifiers

  • HAL Id : ujm-01964663 , version 1

Cite

Serena Rizzolo, Vincent Goiffon, Franck Corbière, R. Molina, Aziouz Chabane, et al.. Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels. Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.B3. ⟨ujm-01964663⟩
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