Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels

Serena Rizzolo (1) , Vincent Goiffon (1) , Franck Corbière (1) , R. Molina (1) , Aziouz Chabane (1) , Pierre Magnan (1) , Sylvain Girard (2) , Aziz Boukenter (2) , Timothé Allanche (2) , Philippe Paillet (3) , Cyprien Muller (3, 2) , Céline Monsanglant-Louvet (4) , Mélanie Osmond (4) , H. Desjonqueres (4) , Jean-Reynald Macé (5) , P. Burnichon (6) , J-P Baudu (6) , Stéphane Plumeri (7)

1 ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace
2 LHC - Laboratoire Hubert Curien [Saint Etienne]
3 DAM/DIF - DAM Île-de-France
4 IRSN - Institut de Radioprotection et de Sûreté Nucléaire
5 Groupe AREVA
6 OPTSYS
7 ANDRA - Agence Nationale pour la Gestion des Déchets Radioactifs

Through the comparison of several CMOS image sensor technologies (including partially pinned photodidiode), the influence of the manufacturing process on the radiation induced degradation is stated up to total ionizing doses of 1 MGy(SiO2).

Domains: Engineering Sciences [physics]

Serena Rizzolo, Vincent Goiffon, Franck Corbière, R. Molina, Aziouz Chabane, et al.. Radiation Hardness Comparison of CMOS Image Sensor Technologies at High Total Ionizing Dose Levels. Nuclear and Space Radiation Effects Conference (NSREC 2018), Jul 2018, Kona, United States. pp.B3. ⟨ujm-01964663⟩