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Université Jean Monnet – Saint-Etienne |  |
Journal articles
Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling
Vincent Goiffon
1
Serena Rizzolo
1
Franck Corbière
1
Sébastien Rolando
1
Said Bounasser
1
Marius Sergent
1
Aziouz Chabane
1
Olivier Marcelot
1
Magali Estribeau
1
Pierre Magnan
1
Philippe Paillet
2
Sylvain Girard
3
Marc Gaillardin
2
Marc Marcandella
2
Timothé Allanche
3
Marc van Uffelen
4
Laura Mont Casellas
4
Robin Scott
5
Wouter de Cock
6
Vincent Goiffon 1
Author
Serena Rizzolo 1
Author
Franck Corbière 1
Author
Sébastien Rolando 1
Author
Magali Estribeau 1
Author
Pierre Magnan 1
Author
Philippe Paillet 2
Author
Sylvain Girard 3
Author IdHAL : sylvain-girard-ujm
Marc Gaillardin 2
Author
Marc Marcandella 2
Author
Timothé Allanche 3
Author
Marc van Uffelen 4
Author
1
DEOS - Département Electronique, Optronique et Signal (ISAE - 10 av. Edouard Belin - BP 54032 - 31055 TOULOUSE Cedex 4 - France)
- ISAE-SUPAERO - Institut Supérieur de l'Aéronautique et de l'Espace (ISAE - 10 av. Edouard Belin - BP 54032 - 31055 TOULOUSE Cedex 4 - France)
2
DAM/DIF - DAM Île-de-France (CEA Bruyères-le-Châtel 91297 Arpajon cedex - France)
- DAM - Direction des Applications Militaires : DAM/DIF (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DAM (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
3
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
4
F4E - Fusion for Energy (Boltzmannstr 2, Garching, 85748 - Germany)
5
Oxford Technologies Ltd. (OTL) (United Kingdom)
6
SCK-CEN - Centre d'Etude de l'Energie Nucléaire (StudieCentrum voor Kernenergie Boeretang 200, 2400 Mol - Belgium)
Abstract : Total ionizing dose effects are studied on a radiation hardened by design (RHBD) 256×256 -pixel CMOS image sensor (CIS) demonstrator developed for ITER remote handling by using X- and γ -ray irradiations. The (color) imaging capabilities of the RHBD CIS are demonstrated up to 10 MGy (SiO2), 1 Grad (SiO2), validating the radiation hardness of most of the designed integrated circuit. No significant sensitivity (i.e., responsivity and color filter transmittance) or readout noise degradation is observed. The proposed readout chain architecture allows achieving a maximum output voltage swing larger than 1 V at 10 MGy (SiO2). The influence of several pixel layout (the gate oxide thickness, the gate overlap distance, and the use of an in-pixel P+ ring) and manufacturing process parameters (photodiode doping profile and process variation) on the radiation-induced dark current increase is studied. The nature of the dark current draining mechanism used to cancel most of the radiation-induced degradation is also discussed and clarified.
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-01964819
Contributor : Sylvain Girard <>
Submitted on : Sunday, December 23, 2018 - 8:42:09 PM
Last modification on : Monday, January 13, 2020 - 5:46:07 PM
Contributor : Sylvain Girard <>
Submitted on : Sunday, December 23, 2018 - 8:42:09 PM
Last modification on : Monday, January 13, 2020 - 5:46:07 PM
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- HAL Id : ujm-01964819, version 1
- DOI : 10.1109/TNS.2017.2765481
Citation
Vincent Goiffon, Serena Rizzolo, Franck Corbière, Sébastien Rolando, Said Bounasser, et al.. Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2018, 65 (1), pp.101-110. ⟨10.1109/TNS.2017.2765481⟩. ⟨ujm-01964819⟩
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