Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

Abstract : We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
Complete list of metadatas

https://hal-ujm.archives-ouvertes.fr/ujm-02048893
Contributor : Sylvain Girard <>
Submitted on : Monday, February 25, 2019 - 10:24:43 PM
Last modification on : Saturday, August 3, 2019 - 1:41:07 AM

Identifiers

Citation

M. Gaillardin, M. Raine, P. Paillet, P. Adell, S. Girard, et al.. Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.631-635. ⟨10.1016/j.nimb.2015.08.085⟩. ⟨ujm-02048893⟩

Share

Metrics

Record views

47