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Université Jean Monnet – Saint-Etienne |  |
Journal articles
Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs
M. Gaillardin
1
M. Raine
1
P. Paillet
1
P. Adell
2
S. Girard
3
O. Duhamel
1
F. Andrieu
4
S. Barraud
4
O. Faynot
4
O. Faynot 4
Author
1
DAM/DIF - DAM Île-de-France (CEA Bruyères-le-Châtel 91297 Arpajon cedex - France)
- DAM - Direction des Applications Militaires : DAM/DIF (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DAM (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
2
JPL - Jet Propulsion Laboratory (4800 Oak Grove Drive, Pasadena, CA 91109-8099, USA - United States)
- NASA (www.nasa.gov - United States)
- CALTECH - California Institute of Technology (1200 East California Blvd, Pasadena, California 91125 - United States)
3
LHC - Laboratoire Hubert Curien [Saint Etienne] (18 rue du Professeur Lauras 42000 SAINT-ETIENNE - France)
- IOGS - Institut d'Optique Graduate School (2 avenue Augustin Fresnel, 91127 Palaiseau Cedex - France)
- UJM - Université Jean Monnet [Saint-Étienne] (10 rue Tréfilerie - 42100 Saint-Étienne - France)
- CNRS - Centre National de la Recherche Scientifique : UMR5516 (France)
4
CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (MINATEC 17, rue des Martyrs, 38054, Grenoble Cedex 9 - France)
- DRT (CEA) - Direction de Recherche Technologique (CEA) : DRT (France)
- CEA - Commissariat à l'énergie atomique et aux énergies alternatives : DRT (Centre de Saclay Centre de Grenoble Centre de Cadarache etc - France)
Abstract : We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-02048893
Contributor : Sylvain Girard <>
Submitted on : Monday, February 25, 2019 - 10:24:43 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM
Contributor : Sylvain Girard <>
Submitted on : Monday, February 25, 2019 - 10:24:43 PM
Last modification on : Thursday, June 11, 2020 - 5:04:08 PM
Identifiers
- HAL Id : ujm-02048893, version 1
- DOI : 10.1016/j.nimb.2015.08.085
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Citation
M. Gaillardin, M. Raine, P. Paillet, P. Adell, S. Girard, et al.. Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.631-635. ⟨10.1016/j.nimb.2015.08.085⟩. ⟨ujm-02048893⟩
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