Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs - Archive ouverte HAL Access content directly
Journal Articles Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms Year : 2015

Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

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Abstract

We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
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Dates and versions

ujm-02048893 , version 1 (25-02-2019)

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M. Gaillardin, M. Raine, P. Paillet, P. Adell, S. Girard, et al.. Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.631-635. ⟨10.1016/j.nimb.2015.08.085⟩. ⟨ujm-02048893⟩
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