Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

M. Gaillardin (1) , M. Raine (1) , P. Paillet (1) , P. Adell (2) , S. Girard (3) , O. Duhamel (1) , F. Andrieu (4) , S. Barraud (4) , O. Faynot (4)

1 DAM/DIF - DAM Île-de-France
2 JPL - Jet Propulsion Laboratory
3 LHC - Laboratoire Hubert Curien [Saint Etienne]
4 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.

Domains: Engineering Sciences [physics]; Micro and nanotechnologies/Microelectronics

M. Gaillardin, M. Raine, P. Paillet, P. Adell, S. Girard, et al.. Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 2015, 365, pp.631-635. ⟨10.1016/j.nimb.2015.08.085⟩. ⟨ujm-02048893⟩