Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

M. Gaillardin 1 M. Raine 1 P. Paillet 1 P. Adell 2 S. Girard 3 O. Duhamel 1 F. Andrieu 4 S. Barraud 4 O. Faynot 4
1 DAM/DIF - DAM Île-de-France
2 JPL - Jet Propulsion Laboratory
3 LHC - Laboratoire Hubert Curien [Saint Etienne]
4 CEA-LETI - Laboratoire d'Electronique et des Technologies de l'Information
Abstract : We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.
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Journal articles
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https://hal-ujm.archives-ouvertes.fr/ujm-02048893
Contributor : Sylvain Girard <>
Submitted on : Monday, February 25, 2019 - 10:24:43 PM
Last modification on : Saturday, August 3, 2019 - 1:41:07 AM

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UNIV-ST-ETIENNE | CEA | DAM | PARISTECH | UNIV-PARIS-SACLAY | IOGS | DRT | LETI | CEA-GRE

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M. Gaillardin, M. Raine, P. Paillet, P. Adell, S. Girard, et al.. Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Elsevier, 2015, 365, pp.631-635. ⟨10.1016/j.nimb.2015.08.085⟩. ⟨ujm-02048893⟩

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